N-Channel: Trench-Gate Power MOSFETs with HiPerFET™ Options

·Trench Gate MOSFET Technology\n·Break down voltages VDSS: 36V to 300V\n·Current ratings ID25: 12A to 660A\n·Ultra-low on-state resistance RDS(on)\n·Superior avalanche ruggedness\n·Junction temperature TJ up to 175°C\n·International standard packages;

Littelfuse

力特

isc N-Channel MOSFET Transistor

文件：295.62 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=200A@ TC=25℃ ·Drain Source Voltage- : VDSS=85V(Min) ·Static Drain-Source On-Resistance : RDS(on) =5.0mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：367.38 Kbytes 页数：2 Pages

ISC

无锡固电

TrenchMV Power MOSFET

文件：211.28 Kbytes 页数：5 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

文件：295.17 Kbytes 页数：2 Pages

ISC

无锡固电