丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

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ISC

无锡固电

isc N-Channel MOSFET Transistor

• FEATURES • Drain Source Voltage- : VDSS= 250V(Min) • Static Drain-Source On-Resistance : RDS(on) = 44mΩ (Max) • Fast Switching • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switch-Mode and Resonant-

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ISC

无锡固电

2nd Generation Trench Gate Power MOSFETs

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etc2List of Unclassifed Manufacturers

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N-Channel Enhancement Mode Avalanche Rated

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IXYS

艾赛斯