TrenchP Power MOSFETs P-Channel Enhancement Mode Avalanche Rated

TrenchP™ Power MOSFETs P-Channel Enhancement Mode Avalanche Rated Features • International Standard Packages • Avalanche Rated • Extended FBSOA • Fast Intrinsic Diode • Low RDS(ON) and QG Advantages • Easy to Mount • Space Savings • High Power Density Applications • High-Side Switchi

文件：222.8 Kbytes 页数：6 Pages

IXYS

艾赛斯

P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -140A@ TC=25℃ · Drain Source Voltage -VDSS= -50V(Min) · Static Drain-Source On-Resistance -RDS(on) = 9mΩ(Max)@VGS= -10V APPLICATIONS · DC-DC Converters · Automatic Test Equipment · High-Side Switching · Battery Chargers

文件：347.63 Kbytes 页数：2 Pages

ISC

无锡固电

P通道MOSFET

• 快速本征二极管\n• 较低的Qg和RDSon\n• 雪崩评级\n• 加大的FBSOA\n• 国际标准包装;

Littelfuse

力特

TrenchP Power MOSFETs P-Channel Enhancement Mode Avalanche Rated

TrenchP™ Power MOSFETs P-Channel Enhancement Mode Avalanche Rated Features • International Standard Packages • Avalanche Rated • Extended FBSOA • Fast Intrinsic Diode • Low RDS(ON) and QG Advantages • Easy to Mount • Space Savings • High Power Density Applications • High-Side Switchi

文件：222.8 Kbytes 页数：6 Pages

IXYS

艾赛斯

TrenchP Power MOSFETs P-Channel Enhancement Mode Avalanche Rated

TrenchP™ Power MOSFETs P-Channel Enhancement Mode Avalanche Rated Features • International Standard Packages • Avalanche Rated • Extended FBSOA • Fast Intrinsic Diode • Low RDS(ON) and QG Advantages • Easy to Mount • Space Savings • High Power Density Applications • High-Side Switchi

文件：222.8 Kbytes 页数：6 Pages

IXYS

艾赛斯