IXSM25N100A

Low VCE(sat) IGBT, High Speed IGBT

DAM25N100C

N-ChannelEnhancementModeMOSFET

DAM25N100D

N-ChannelEnhancementModeMOSFET

IXGH25N100

LowVHighspeedIGBT

Features ●Internationalstandardpackages ●2ndgenerationHDMOSTMprocess ●LowVCE(sat) -forlowon-stateconductionlosses ●Highcurrenthandlingcapability ●MOSGateturn-on -drivesimplicity ●Voltageratingguaranteedathightemperature(125°C) Applications ●ACmotors

RM25N100DF

N-ChannelEnhancementModePowerMOSFET

GeneralFeatures VDS=100V,ID=25A RDS(ON)25mΩ@VGS=10V RDS(ON)38mΩ@VGS=4.5V HighdensitycelldesignforultralowRdson Fullycharacterizedavalanchevoltageandcurrent GoodstabilityanduniformitywithhighEAS Excellentpackageforgoodheatdissipation

RMD25N100DFV

N-ChannelEnhancementModePowerMOSFET

Feature 100V,25A Rds(on)