IXGH30N50说明书PDF资料供应价格无锡固电-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
30N50	文件：326.02 Kbytes Page：2 Pages	15TQ060	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FSW30N50C	文件：2.44579 Mbytes Page：7 Pages	THINKISEMI24A,500VN-CHANNELPLANARSTRIPEPOWERMOSFETs	THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司	THINKISEMI
IXFH30N50	文件：336.82 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=30A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.16Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFH30N50	文件：110.19 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance-easytodriveandtoprotect •Fastintrin	IXYS IXYS Integrated Circuits Division	IXYS
IXFH30N50P	文件：326.23 Kbytes Page：5 Pages	PolarHVHiPerFETPowerMOSFET N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance-easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity	IXYS IXYS Integrated Circuits Division	IXYS
IXFH30N50P	文件：336.97 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=30A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFK30N50	文件：328.05 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=30A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.16Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFK30N50Q	文件：114.2 Kbytes Page：4 Pages	HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●Moldingepox	IXYS IXYS Integrated Circuits Division	IXYS
IXFR30N50	文件：92.65 Kbytes Page：4 Pages	HiPerFETPowerMOSFETsISOPLUS247	IXYS IXYS Integrated Circuits Division	IXYS
IXFR30N50	文件：329.75 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=30A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=160mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFR30N50Q	文件：92.65 Kbytes Page：4 Pages	HiPerFETPowerMOSFETsISOPLUS247	IXYS IXYS Integrated Circuits Division	IXYS
IXFT30N50	文件：110.19 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance-easytodriveandtoprotect •Fastintrin	IXYS IXYS Integrated Circuits Division	IXYS
IXFT30N50P	文件：326.23 Kbytes Page：5 Pages	PolarHVHiPerFETPowerMOSFET N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance-easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity	IXYS IXYS Integrated Circuits Division	IXYS
IXFV30N50P	文件：326.23 Kbytes Page：5 Pages	PolarHVHiPerFETPowerMOSFET N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance-easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity	IXYS IXYS Integrated Circuits Division	IXYS
IXFV30N50PS	文件：326.23 Kbytes Page：5 Pages	PolarHVHiPerFETPowerMOSFET N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance-easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity	IXYS IXYS Integrated Circuits Division	IXYS
IXFX30N50	文件：367.16 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=30A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.16Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFX30N50Q	文件：114.2 Kbytes Page：4 Pages	HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●Moldingepox	IXYS IXYS Integrated Circuits Division	IXYS
IXTH30N50	文件：59.23 Kbytes Page：2 Pages	MegaMOSFET MegaMOS™FET N-ChannelEnhancementMode Features •InternationalstandardpackageJEDECTO-247AD •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Highcommutatingdv/dtrating •Fastswitchingtimes Applications •Switch-modeandresonant-modepowersupplies •M	IXYS IXYS Integrated Circuits Division	IXYS
IXTH30N50	文件：380.75 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXTH30N50L	文件：148.68 Kbytes Page：5 Pages	N-ChannelEnhancementMode N-ChannelEnhancementMode Features ●Designedforlinearoperation ●Internationalstandardpackages ●UnclampedInductiveSwitching(UIS)rated. ●MoldingepoxiesmeetUL94V-0flammabilityclassification ●Integratedgateresistorforeasyparalleling ●GuaranteedFBSOAat75°C Applica	IXYS IXYS Integrated Circuits Division	IXYS

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详细参数

型号：
IXGH30N50
功能描述：
TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 50A I(C) | TO-247

供应商	型号	品牌	批号	封装	库存	备注	价格
瀚佳科技(深圳)有限公司	IXGH30N50	IXYS	18+	TO-247	2050	公司大量全新原装正品随时可以发货	询价
深圳市兴灿科技有限公司	IXGH30N50	IXYS	23+	TO-247	1300		询价
贸泽芯城（深圳）电子科技有限公司	IXGH30N50	IXYS/艾赛斯	21+ROHS	TO-247	10000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市惊羽科技有限公司	IXGH30N50AA	IXYS-艾赛斯	24+25+/26+27+	车规-模块MODULE	1880	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价
深圳市一线半导体有限公司	IXGH30N60	IXYS	08+(pbfree)	TO-247AD-3	8866		询价
深圳市永贝尔科技有限公司	IXGH30N60	IXYS	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
深圳市芯祺盛科技有限公司	IXGH30N60	IXYS	1746+	TO247	8862	深圳公司现货!特价支持工厂客户!提供样品!	询价
深圳兆威电子有限公司	IXGH30N60	IXYS/艾赛斯	23+	TO-3P	90000	只做原厂渠道价格优势可提供技术支持	询价
深圳市汇莱威科技有限公司	IXGH30N60	IXYS/艾赛斯		TO-247-3	265209	假一罚十原包原标签常备现货!	询价
深圳市威尔健半导体有限公司	IXGH30N60	IXYS/艾赛斯	23+	TO-247-3	50000	全新原装正品现货,支持订货	询价

更多IXGH30N50供应商更新时间2024-5-29 16:38:00

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