IXFV12N90P资料datasheet下载批发采购IXYS-114ic电子网

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IXFV12N90P	文件：184.73 Kbytes Page：4 Pages	Polar Power MOSFET HiPerFET Polar™HiPerFET™PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features •InternationalStandardPackages •AvalancheRated •LowPackageInductance •FastIntrinsicDiode Advantages •EasytoMount •SpaceSavings •HighPowerDensity Applications: •Sw	IXYS IXYS Integrated Circuits Division	IXYS
IXFV12N90PS	文件：184.73 Kbytes Page：4 Pages	Polar Power MOSFET HiPerFET Polar™HiPerFET™PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features •InternationalStandardPackages •AvalancheRated •LowPackageInductance •FastIntrinsicDiode Advantages •EasytoMount •SpaceSavings •HighPowerDensity Applications: •Sw	IXYS IXYS Integrated Circuits Division	IXYS
IXFV12N90P	文件：234.64 Kbytes Page：5 Pages	Power MOSFET	IXYS IXYS Integrated Circuits Division	IXYS
IXFV12N90PS	文件：234.64 Kbytes Page：5 Pages	Power MOSFET	IXYS IXYS Integrated Circuits Division	IXYS
12N90	文件：49.38 Kbytes Page：2 Pages	FastSwitching	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
12N90	文件：192.21 Kbytes Page：5 Pages	12A,900VN-CHANNELPOWERMOSFET	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司	UTC
IXFH12N90	文件：372.76 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFH12N90	文件：295.27 Kbytes Page：8 Pages	HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Integrated Circuits Division	IXYS
IXFH12N90	文件：85.99 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs	IXYS IXYS Integrated Circuits Division	IXYS
IXFH12N90P	文件：184.73 Kbytes Page：4 Pages	PolarPowerMOSFETHiPerFET Polar™HiPerFET™PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features •InternationalStandardPackages •AvalancheRated •LowPackageInductance •FastIntrinsicDiode Advantages •EasytoMount •SpaceSavings •HighPowerDensity Applications: •Sw	IXYS IXYS Integrated Circuits Division	IXYS
IXFH12N90P	文件：372.77 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFH12N90P	文件：234.64 Kbytes Page：5 Pages	PowerMOSFET	IXYS IXYS Integrated Circuits Division	IXYS
IXFH12N90Q	文件：373.25 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFH12N90Q	文件：58.04 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsQClass Features •IXYSadvancedlowQgprocess •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •Internationalstandardpackages •LowRDS(on) •UnclampedInductiveSwitching(UIS)rated •MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages	IXYS IXYS Integrated Circuits Division	IXYS
IXFM12N90	文件：295.27 Kbytes Page：8 Pages	HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Integrated Circuits Division	IXYS
IXFM12N90	文件：85.99 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs	IXYS IXYS Integrated Circuits Division	IXYS
IXFM12N90	文件：317.84 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.8Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFT12N90Q	文件：58.04 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsQClass Features •IXYSadvancedlowQgprocess •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •Internationalstandardpackages •LowRDS(on) •UnclampedInductiveSwitching(UIS)rated •MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages	IXYS IXYS Integrated Circuits Division	IXYS
IXFZ12N90	文件：295.27 Kbytes Page：8 Pages	HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Integrated Circuits Division	IXYS
IXGH12N90C	文件：37.17 Kbytes Page：2 Pages	HiPerFASTIGBTLightspeedSeries Features •VeryhighfrequencyIGBT •NewgenerationHDMOSTMprocess •InternationalstandardpackageJEDECTO-247 •Highpeakcurrenthandlingcapability Applications •PFCcircuit •ACmotorspeedcontrol •DCservoandrobotdrives •Switch-modeandresonant-modepowersupplies •High	IXYS IXYS Integrated Circuits Division	IXYS

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详细参数

型号：
IXFV12N90
功能描述：
MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市华来深电子有限公司	IXFV12N90P	IXYS	23+	TO-220-3	11846	一级代理商现货批发,原装正品,假一罚十	询价
深圳市宏捷佳电子科技有限公司	IXFV12N90P	IXYS	23+	PLUSTO-220	12300	全新原装真实库存含13点增值税票!	询价
深圳兆威电子有限公司	IXFV12N90P	IXYS	20+	TO-220-3	90000	全新原装正品/库存充足	询价
深圳市国宇半导体科技有限公司	IXFV12N90P	IXYS/艾赛斯	23+	PLUS220	10000	公司只做原装正品	询价
深圳市河锋鑫科技有限公司	IXFV12N90P	IXYS	22+	TO2203 Short Tab	9000	原厂渠道,现货配单	询价
深圳市芯福林电子科技有限公司	IXFV12N90P	IXYS	21+	TO2203 Short Tab	13880	公司只售原装,支持实单	询价
贸泽芯城（深圳）电子科技有限公司	IXFV12N90P	IXYS/艾赛斯	21+ROHS	PLUSTO-220	12300	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
易创佳业科技（深圳）有限公司	IXFV12N90P	IXYS/艾赛斯	23+	PLUS220	6000	原装正品，支持实单	询价
深圳市鹏顺微电子科技有限公司	IXFV12N90P	IXYS	2022+	TO-220-3(SMT)标片	38550	全新原装支持表配单中国著名电子元器件独立分销	询价
深圳市能元时代电子有限公司	IXFV12N90P	IXYS	23+	TO-220-3	67990	##公司主营品牌长期供应100%原装现货可含税提供技术	询价

更多IXFV12N90供应商更新时间2024-6-21 14:58:00

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