N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

·The IXYS most popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering Low gate charge and excellent ruggedness with a fast intrinsic diode. Available in many standard industrial packages including isolated types;

Littelfuse

力特

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.9Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, D

文件：372.79 Kbytes 页数：2 Pages

ISC

无锡固电

HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

文件：82.12 Kbytes 页数：4 Pages

IXYS

艾赛斯

TO-247

IXYS

艾赛斯

上传：深圳市凌旭科技有限公司

TO-263

IXYS/LITTELFUSE

上传：深圳市斌腾达科技有限公司