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IXFH60N20

HiPerFET Power MOSFETs

HiPerFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt Features •Internationalstandardpackages •LowRDS(on) •RatedforunclampedInductiveloadswitching(UIS) •MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages •Easytomount •Spacesav

IXYS

IXYS Integrated Circuits Division

IXFH60N20

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=60A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=33mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFH60N20F

HiPerRFTM Power MOSFETs

HiPerRFTMPowerMOSFETs F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRgHighdV/dt,Lowtrr Features •RFcapableMOSFETs •Doublemetalprocessforlowgateresistance •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance-

IXYS

IXYS Integrated Circuits Division

IXFH60N20F

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=60A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=38mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFH60N20F_08

HiPerRF Power MOSFET F-Class: MegaHertz Switching

IXYS

IXYS Integrated Circuits Division

60N20

HiPerFETPowerMOSFETs

HiPerFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt Features •Internationalstandardpackages •LowRDS(on) •RatedforunclampedInductiveloadswitching(UIS) •MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages •Easytomount •Spacesav

IXYS

IXYS Integrated Circuits Division

FIR60N20ANG

N-ChannelEnhancementModePowerMosfet

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半导体深圳市福斯特半导体有限公司

FIR60N20PG

N-ChannelEnhancementModePowerMosfet

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半导体深圳市福斯特半导体有限公司

HM60N20

N-ChannelEnhancementModePowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HM60N20D

N-ChannelEnhancementModePowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

IXFC60N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=60A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=33mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFC60N20

HiPerFETMOSFETISOPLUS220TM

HiPerFET™MOSFETISOPLUS220™ ElectricallyIsolatedBackSurface N-ChannelEnhancementMode Highdv/dt,Lowtrr,HDMOS™Family Features •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation •Lowdraintot

IXYS

IXYS Integrated Circuits Division

IXFT60N20

HiPerFETPowerMOSFETs

HiPerFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt Features •Internationalstandardpackages •LowRDS(on) •RatedforunclampedInductiveloadswitching(UIS) •MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages •Easytomount •Spacesav

IXYS

IXYS Integrated Circuits Division

IXFT60N20F

HiPerRFPowerMOSFETF-Class:MegaHertzSwitching

IXYS

IXYS Integrated Circuits Division

IXTA60N20T

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTA60N20T

N-ChannelEnhancementModeForPDPDriversAvalancheRated

N-ChannelEnhancementModeForPDPDrivers AvalancheRated Features HighCurrentHandlingCapability 175°COperatingTemperature AvalancheRated FastIntrinsicRectifier LowRDS(on) Applications DC-DCConverters BatteryChargers Switch-ModeandResonant-Mode

IXYS

IXYS Integrated Circuits Division

IXTP60N20T

N-ChannelEnhancementModeForPDPDriversAvalancheRated

N-ChannelEnhancementModeForPDPDrivers AvalancheRated Features HighCurrentHandlingCapability 175°COperatingTemperature AvalancheRated FastIntrinsicRectifier LowRDS(on) Applications DC-DCConverters BatteryChargers Switch-ModeandResonant-Mode

IXYS

IXYS Integrated Circuits Division

IXTP60N20T

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTQ60N20T

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTQ60N20T

N-ChannelEnhancementModeForPDPDriversAvalancheRated

N-ChannelEnhancementModeForPDPDrivers AvalancheRated Features HighCurrentHandlingCapability 175°COperatingTemperature AvalancheRated FastIntrinsicRectifier LowRDS(on) Applications DC-DCConverters BatteryChargers Switch-ModeandResonant-Mode

IXYS

IXYS Integrated Circuits Division

详细参数

  • 型号:

    IXFH60N20

  • 功能描述:

    MOSFET 60 Amps 200V 0.033 Rds

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IXYS
23+
TO-247AD(IXFH)
30000
晶体管-分立半导体产品-原装正品
询价
23+
N/A
38460
正品授权货源可靠
询价
IXYS
1931+
N/A
18
加我qq或微信,了解更多详细信息,体验一站式购物
询价
IXYS
1809+
TO-247
326
就找我吧!--邀您体验愉快问购元件!
询价
IXYS/艾赛斯
23+
TO-247
5745
公司只做原装正品
询价
IXYS/艾赛斯
23+
TO-247
50000
全新原装正品现货,支持订货
询价
IXYS
22+
NA
18
加我QQ或微信咨询更多详细信息,
询价
IXYS
22+
TO2473
9000
原厂渠道,现货配单
询价
IXYS/艾赛斯
2022
TO-247
80000
原装现货,OEM渠道,欢迎咨询
询价
IXYS
TO-247
68900
原包原标签100%进口原装常备现货!
询价
更多IXFH60N20供应商 更新时间2024-4-28 15:09:00