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IXFK64N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=64A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=85mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFK64N50P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=64A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=85mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFK64N50P

PolarPowerMOSFETHiPerFET

IXYS

IXYS Corporation

IXFN64N50P

PolarHVTMHiPerFETPowerMOSFET

IXYS

IXYS Corporation

IXFR64N50P

PolarPowerMOSFETHiPerFET

IXYS

IXYS Corporation

IXFX64N50P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=64A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=85mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFX64N50P

PolarPowerMOSFETHiPerFET

IXYS

IXYS Corporation

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