isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 42A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 26mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：323.93 Kbytes 页数：2 Pages

ISC

无锡固电

PolarHT HiPerFET Power MOSFET ISOPLUS220

文件：118.11 Kbytes 页数：5 Pages

IXYS

艾赛斯

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

·The IXYS most popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering Low gate charge and excellent ruggedness with a fast intrinsic diode. Available in many standard industrial packages including isolated types;

Littelfuse

力特

PolarHT HiPerFET Power MOSFET

文件：324.46 Kbytes 页数：5 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 96A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 24mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：372.88 Kbytes 页数：2 Pages

ISC

无锡固电

PolarHT HiPerFET Power MOSFET

文件：324.46 Kbytes 页数：5 Pages

IXYS

艾赛斯