ISS55EP06LM

丝印：CL；Package：PG-SOT23；MOSFET OptiMOSTM Small Signal Transistor, -60 V

Features •P-Channel •Verylowon-resistanceRDS(on)@VGS=4.5V •100avalanchetested •LogicLevel •Enhancementmode •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

ISS55EP06LM

P-channel MOSFETs in normal and logic level, reducing design complexity in medium and low power applications; • Most products qualified to AEC Q101\n• VDS = -60V\n• Wide RDS(on) range\n• Normal Level and Logic Level availability\n\n优势:\n• Easy interface to MCU\n• Improved efficiency at low loads due to low Qg\n• Fast switching\n• Avalanche ruggedness\n;

OptiMOS™  P-channel 60V MOSFETs in SOT-23 package is ideally suited for load switch, battery management as well as reverse polarity protection applications. Main advantage of OptiMOS™ P-channel MOSFETs is the simplifying of the design complexity in medium and low power applications. Its easy interface to Microcontroller Unit (MCU), fast switching as well as avalanche ruggedness makes Infineon’s OptiMOS™ P-channel MOSFETs suitable for high quality demanding applications. The products improve efficiency at low loads due to low Qg.and are available in normal and logic level featuring a wide RDS(on) range.\n

ISU04N60A

IPS
TO-251

ISX019-AAQV-W

SONY/索尼
LGA

SONY/索尼

ISX031-AAQV-W

TI