丝印：DPAK；Package：TO-252；N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤0.9Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：336.34 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRIPTION • High peak current capability • Ultra low gate charge • Ultra low effective capacitances • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.9Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performa

文件：339.2 Kbytes 页数：2 Pages

ISC

无锡固电

Cool MOS??Power Transistor

Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

文件：254.15 Kbytes 页数：12 Pages

Infineon

英飞凌

Cool MOS??Power Transistor

文件：681.15 Kbytes 页数：13 Pages

Infineon

英飞凌