型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
ISO5852S | ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features 1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T 文件:1.23968 Mbytes 页数:40 Pages | TI 德州仪器 | TI | |
ISO5852S | High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features 文件:1.67464 Mbytes 页数:43 Pages | TI 德州仪器 | TI | |
ISO5852S | High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Split Outputs and Active Safety Features 文件:1.4767 Mbytes 页数:37 Pages | TI 德州仪器 | TI | |
ISO5852S | High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features 文件:1.6761 Mbytes 页数:43 Pages | TI 德州仪器 | TI | |
丝印:ISO5852SQ;Package:SOIC;ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features 1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T 文件:1.23968 Mbytes 页数:40 Pages | TI 德州仪器 | TI | ||
丝印:ISO5852SQ;Package:SOIC;ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features 1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T 文件:1.23968 Mbytes 页数:40 Pages | TI 德州仪器 | TI | ||
丝印:ISO5852SQ;Package:SOIC;ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features 1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T 文件:1.23968 Mbytes 页数:40 Pages | TI 德州仪器 | TI | ||
丝印:ISO5852SQ;Package:SOIC;ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features 1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T 文件:1.23968 Mbytes 页数:40 Pages | TI 德州仪器 | TI | ||
ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features 1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T 文件:1.23968 Mbytes 页数:40 Pages | TI 德州仪器 | TI | ||
ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features 1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T 文件:1.23968 Mbytes 页数:40 Pages | TI 德州仪器 | TI |
技术参数
- Isolation rating (Vrms):
5700
- Power switch:
IGBT
- Peak output current (A):
5
- DIN V VDE V 0884-10 transient overvoltage rating (Vpk):
8000
- DIN V VDE V 0884-10 working voltage (Vpk):
2121
- Output VCC/VDD (Max) (V):
30
- Output VCC/VDD (Min) (V):
15
- Input VCC (Min) (V):
2.25
- Input VCC (Max) (V):
5.5
- Prop delay (ns):
76
- Operating temperature range (C):
-40 to 125
- Undervoltage lockout (Typ):
12
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TI |
24+ |
SOIC|16 |
8230 |
免费送样原盒原包现货一手渠道联系 |
询价 | ||
TI德州仪器 |
22+ |
24000 |
原装正品现货,实单可谈,量大价优 |
询价 | |||
TI/德州 |
2018+ |
SOIC |
32500 |
德州代理承诺销售原装正品公司可开正规17%增值税票 |
询价 | ||
N/A |
99 |
询价 | |||||
TI |
24+ |
SMD |
17900 |
门驱动器 |
询价 | ||
TI |
25+23+ |
SOP-16 |
27245 |
绝对原装正品全新进口深圳现货 |
询价 | ||
TI |
16+ |
SOIC |
10000 |
原装正品 |
询价 | ||
TI/德州仪器 |
24+ |
16-SOIC |
15050 |
原厂支持公司优势现货 |
询价 | ||
TI德州仪器 |
20+ |
SOIC-16 |
18500 |
只做全新原装,支持样品 |
询价 | ||
TI |
25+ |
SOP-16 |
968 |
就找我吧!--邀您体验愉快问购元件! |
询价 |
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