ISL81807

80V Dual or 2-Phase Synchronous Boost Controller Optimized to Drive E-mode GaN FET

The ISL81807 is a dual synchronous boost controller that generates two independent outputs or one output with two interleaved phases for a wide variety of applications in industrial and general-purpose segments. With a wide input and output voltage ranges, the controller is suitable for telecommunic; • Optimized to drive E-mode GaN FET\n• Wide input voltage range: 4.5V to 80V\n• Wide output voltage range: 5V to 80V\n• Gate drive voltage: 5.3V\n• Four FET drivers\n• Constant output voltage and output current feedback loop control\n• Light-load efficiency enhancement• Low ripple diode emulation an;

ISL81807

80V Dual Synchronous Boost Controller Optimized to Drive E-mode GaN FET

Features ▪Wideinputvoltagerange:4.5Vto80V ▪Wideoutputvoltagerange:5Vto80V ▪Gatedrivevoltage:5.3V ▪FourFETdrivers ▪Constantoutputvoltageandoutputcurrent feedbackloopcontrol ▪Light-loadefficiencyenhancement •Lowripplediodeemulationandburstmode operatio

ISL81807EVAL1Z

80V Dual Synchronous Boost Controller Optimized to Drive E-mode GaN FET

Features ▪Wideinputvoltagerange:4.5Vto80V ▪Wideoutputvoltagerange:5Vto80V ▪Gatedrivevoltage:5.3V ▪FourFETdrivers ▪Constantoutputvoltageandoutputcurrent feedbackloopcontrol ▪Light-loadefficiencyenhancement •Lowripplediodeemulationandburstmode operatio

ISL81807FRTZ-T

80V Dual Synchronous Boost Controller Optimized to Drive E-mode GaN FET

Features ▪Wideinputvoltagerange:4.5Vto80V ▪Wideoutputvoltagerange:5Vto80V ▪Gatedrivevoltage:5.3V ▪FourFETdrivers ▪Constantoutputvoltageandoutputcurrent feedbackloopcontrol ▪Light-loadefficiencyenhancement •Lowripplediodeemulationandburstmode operatio

ISL8204MIRZ

RENESAS 瑞萨
QFN

RENESAS 瑞萨