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AD6426

EnhancedGSMProcessor

GENERALDESCRIPTION TheAD6426EnhancedGSMProcessor(EGSMP)isthecentralcomponentofthehighlyintegratedAD20msp425GSMChipset.Offeringalowtotalchipcount,lowbillofmaterialscostandlongtalkandstandbytimes,thechipsetoffersdesignersastraightforwardroutetoahighlyco

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD6426XB

EnhancedGSMProcessor

GENERALDESCRIPTION TheAD6426EnhancedGSMProcessor(EGSMP)isthecentralcomponentofthehighlyintegratedAD20msp425GSMChipset.Offeringalowtotalchipcount,lowbillofmaterialscostandlongtalkandstandbytimes,thechipsetoffersdesignersastraightforwardroutetoahighlyco

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD6426XST

EnhancedGSMProcessor

GENERALDESCRIPTION TheAD6426EnhancedGSMProcessor(EGSMP)isthecentralcomponentofthehighlyintegratedAD20msp425GSMChipset.Offeringalowtotalchipcount,lowbillofmaterialscostandlongtalkandstandbytimes,thechipsetoffersdesignersastraightforwardroutetoahighlyco

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AN6426NK

Hands-freeSpeechNetworkIC

■Features •Incorporatesallthefunctionsrequiredofahands-free telephone. •Incorporatesallthefunctionsrequiredofahandset. •ComplieswithACandDCimpedancerequirements. •Providesawidedynamicrange. •Anoisedetectingcircuitpreventsinadvertenttransmission. •Operati

PanasonicPanasonic Corporation

松下松下电器

AON6426

DFN5X6PACKAGEMARKINGDESCRIPTION

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AON6426L

DFN5X6PACKAGEMARKINGDESCRIPTION

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AON6426L

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAON6426LcombinesadvancedtrenchMOSFETtechnologywithalowresistancepackagetoprovideextremelylowRDS(ON).Thisdeviceisidealforloadswitchandbatteryprotectionapplications. -RoHSCompliant -HalogenFree Features VDS(V)=30V ID=24A(VGS=

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

CEA6426

N-Channel0-V(D-S)MOSFET

FEATURES •Halogen-free •TrenchFET®PowerMOSFET APPLICATIONS •LoadSwitchesforPortableDevices

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

CEA6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,3A,RDS(ON)=90mΩ@VGS=10V. RDS(ON)=110mΩ@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-89package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEA6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,4.6A,RDS(ON)=90mW@VGS=10V. RDS(ON)=110mW@VGS=4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-89package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,17A,RDS(ON)=66mΩ@VGS=10V. RDS(ON)=85mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CED6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,16A,RDS(ON)=66mΩ@VGS=10V. RDS(ON)=85mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CED6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,16A,RDS(ON)=66mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS( Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=85mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,4.7A,RDS(ON)=66mW@VGS=10V. RDS(ON)=85mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,4.7A,RDS(ON)=66mΩ@VGS=10V. RDS(ON)=85mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEP6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,17A,RDS(ON)=66mΩ@VGS=10V. RDS(ON)=85mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,4.5A,RDS(ON)=90mΩ@VGS=10V. RDS(ON)=110mΩ@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-223package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEU6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,34A,RDS(ON)=25mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEU6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,16A,RDS(ON)=66mΩ@VGS=10V. RDS(ON)=85mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEU6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,16A,RDS(ON)=66mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS( Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=85mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

供应商型号品牌批号封装库存备注价格
INTERSIL
22+
QFN16
2192
⊙⊙新加坡大量现货库存,深圳常备现货!欢迎查询!⊙
询价
INTERSIL
23+
QFN16
5000
原装现货,优势热卖
询价
intersil
16+
原厂封装
10000
全新原装正品,代理优势渠道供应,欢迎来电咨询
询价
Intersil
21+
NA
12500
正品专卖,进口原装深圳现货
询价
INTERSIL
21+ROHS
12510
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
INTERSIL
05/06+
SOP14
2494
全新原装100真实现货供应
询价
INTERSIL
23+
SOP14
8890
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
INTERSIL
0218+
SOP/14
100
原装现货海量库存欢迎咨询
询价
INTERSIL
SOP14
68500
一级代理 原装正品假一罚十价格优势长期供货
询价
INTERSIL
2402+
SOP14
8324
原装正品!实单价优!
询价
更多ISL6426IR供应商 更新时间2024-6-20 11:02:00