2M x 8 HIGH-SPEED CMOS STATIC RAM

文件：118.05 Kbytes 页数：20 Pages

ISSI

矽成半导体

2M x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compa

文件：378.63 Kbytes 页数：19 Pages

ISSI

矽成半导体

2M x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compa

文件：378.63 Kbytes 页数：19 Pages

ISSI

矽成半导体

2M x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compa

文件：378.63 Kbytes 页数：19 Pages

ISSI

矽成半导体

2M x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compa

文件：378.63 Kbytes 页数：19 Pages

ISSI

矽成半导体

2M x 8 HIGH-SPEED CMOS STATIC RAM

文件：118.05 Kbytes 页数：20 Pages

ISSI

矽成半导体

2M x 8 HIGH-SPEED CMOS STATIC RAM

文件：118.05 Kbytes 页数：20 Pages

ISSI

矽成半导体

Asynchronous SRAM

·Broad Solution:- x8, x16, and x32 configurations available- 5V/3.3V/1.8V VDD Power Supply- Commercial, Industrial, and Automotive Temperature (-40 °C to 125 °C) support- BGA, SOJ, SOP, sTSOP, TSOP packages available\n·ECC feature available for High Speed Asynchronous SRAMs\n·Long-term support

ISSI

矽成半导体

Package：44-TSOP（0.400"，10.16mm 宽）；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC SRAM 16MBIT PAR 44TSOP II

ISSI, Integrated Silicon Solution Inc

Package：44-TSOP（0.400"，10.16mm 宽）；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC SRAM 16MBIT PAR 44TSOP II

ISSI, Integrated Silicon Solution Inc