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IS61NLF25636集成电路(IC)的存储器规格书PDF中文资料

厂商型号 |
IS61NLF25636 |
参数属性 | IS61NLF25636 封装/外壳为119-BBGA;包装为托盘;类别为集成电路(IC)的存储器;产品描述:IC SRAM 9MBIT PARALLEL 119PBGA |
功能描述 | SRAM |
封装外壳 | 119-BBGA |
文件大小 |
155.61 Kbytes |
页面数量 |
20 页 |
生产厂商 | Integrated Silicon Solution Inc |
企业简称 |
ISSI【北京矽成】 |
中文名称 | 北京矽成半导体有限公司官网 |
原厂标识 | |
数据手册 | |
更新时间 | 2025-8-4 23:00:00 |
人工找货 | IS61NLF25636价格和库存,欢迎联系客服免费人工找货 |
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IS61NLF25636规格书详情
DESCRIPTION
The 8 Meg NF product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for network and communications customers. They are organized as 262,144 words by 32 bits, 262,144 words by 36 bits and 524,288 words by 18 bits, fabricated with ISSIs advanced CMOS technology.
Incorporating a no wait state feature, wait cycles are eliminated when the bus switches from read to write, or write to read. This device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers are controlled by a positive-edge-triggered single clock input. Operations may be suspended and all synchronous inputs ignored when Clock Enable, CKE is HIGH. In this state the internal device will hold their previous values.
All Read, Write and Deselect cycles are initiated by the ADV input. When the ADV is HIGH the internal burst counter is incremented. New external addresses can be loaded when ADV is LOW.
Write cycles are internally self-timed and are initiated by the rising edge of the clock inputs and when WE is LOW. Separate byte enables allow individual bytes to be written.
A burst mode pin (MODE) defines the order of the burst sequence. When tied HIGH, the interleaved burst sequence is selected. When tied LOW, the linear burst sequence is selected.
FEATURES
• 100 percent bus utilization
• No wait cycles between Read and Write
• Internal self-timed write cycle
• Individual Byte Write Control
• Single R/W (Read/Write) control pin
• Clock controlled, registered address, data and control
• Interleaved or linear burst sequence control using MODE input
• Three chip enables for simple depth expansion and address pipelining for TQFP
• Power Down mode
• Common data inputs and data outputs
• CKE pin to enable clock and suspend operation
• JEDEC 100-pin TQFP, 119 PBGA package
• Single +3.3V power supply (± 5)
• NF Version: 3.3V I/O Supply Voltage
• NLF Version: 2.5V I/O Supply Voltage
• Industrial temperature available
产品属性
- 产品编号:
IS61NLF25636A-7.5B2I-TR
- 制造商:
ISSI, Integrated Silicon Solution Inc
- 类别:
集成电路(IC) > 存储器
- 包装:
托盘
- 存储器类型:
易失
- 存储器格式:
SRAM
- 技术:
SRAM - 同步,SDR
- 存储容量:
9Mb(256K x 36)
- 存储器接口:
并联
- 电压 - 供电:
3.135V ~ 3.465V
- 工作温度:
-40°C ~ 85°C(TA)
- 安装类型:
表面贴装型
- 封装/外壳:
119-BBGA
- 供应商器件封装:
119-PBGA(14x22)
- 描述:
IC SRAM 9MBIT PARALLEL 119PBGA
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
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24+ |
NA/ |
417 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ISSI(美国芯成) |
24+ |
LQFP100(14x20) |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
ISSI |
21+ |
TQFP100 |
7500 |
全新原装长期特价销售 |
询价 | ||
ISSI |
2014 |
TQFP100 |
417 |
原装现货支持BOM配单服务 |
询价 | ||
ISSI |
24+ |
TQFP100 |
12000 |
专营ISSI进口原装正品假一赔十可開17增值稅票 |
询价 | ||
ISSI |
25+ |
TQFP100 |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
ISSI Integrated Silicon Solut |
25+ |
119-BBGA |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
ISSI |
23+ |
100-TQFP(14x20) |
1389 |
专业分销产品!原装正品!价格优势! |
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ISSI, |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
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ISSI |
2450+ |
TQFP100 |
8850 |
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