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IS61NLF25636集成电路(IC)的存储器规格书PDF中文资料

IS61NLF25636
厂商型号

IS61NLF25636

参数属性

IS61NLF25636 封装/外壳为119-BBGA;包装为托盘;类别为集成电路(IC)的存储器;产品描述:IC SRAM 9MBIT PARALLEL 119PBGA

功能描述

SRAM

封装外壳

119-BBGA

文件大小

155.61 Kbytes

页面数量

20

生产厂商 Integrated Silicon Solution Inc
企业简称

ISSI北京矽成

中文名称

北京矽成半导体有限公司官网

原厂标识
ISSI
数据手册

下载地址一下载地址二

更新时间

2025-8-4 23:00:00

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IS61NLF25636规格书详情

DESCRIPTION

The 8 Meg NF product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for network and communications customers. They are organized as 262,144 words by 32 bits, 262,144 words by 36 bits and 524,288 words by 18 bits, fabricated with ISSIs advanced CMOS technology.

Incorporating a no wait state feature, wait cycles are eliminated when the bus switches from read to write, or write to read. This device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers are controlled by a positive-edge-triggered single clock input. Operations may be suspended and all synchronous inputs ignored when Clock Enable, CKE is HIGH. In this state the internal device will hold their previous values.

All Read, Write and Deselect cycles are initiated by the ADV input. When the ADV is HIGH the internal burst counter is incremented. New external addresses can be loaded when ADV is LOW.

Write cycles are internally self-timed and are initiated by the rising edge of the clock inputs and when WE is LOW. Separate byte enables allow individual bytes to be written.

A burst mode pin (MODE) defines the order of the burst sequence. When tied HIGH, the interleaved burst sequence is selected. When tied LOW, the linear burst sequence is selected.

FEATURES

• 100 percent bus utilization

• No wait cycles between Read and Write

• Internal self-timed write cycle

• Individual Byte Write Control

• Single R/W (Read/Write) control pin

• Clock controlled, registered address, data and control

• Interleaved or linear burst sequence control using MODE input

• Three chip enables for simple depth expansion and address pipelining for TQFP

• Power Down mode

• Common data inputs and data outputs

• CKE pin to enable clock and suspend operation

• JEDEC 100-pin TQFP, 119 PBGA package

• Single +3.3V power supply (± 5)

• NF Version: 3.3V I/O Supply Voltage

• NLF Version: 2.5V I/O Supply Voltage

• Industrial temperature available

产品属性

  • 产品编号:

    IS61NLF25636A-7.5B2I-TR

  • 制造商:

    ISSI, Integrated Silicon Solution Inc

  • 类别:

    集成电路(IC) > 存储器

  • 包装:

    托盘

  • 存储器类型:

    易失

  • 存储器格式:

    SRAM

  • 技术:

    SRAM - 同步,SDR

  • 存储容量:

    9Mb(256K x 36)

  • 存储器接口:

    并联

  • 电压 - 供电:

    3.135V ~ 3.465V

  • 工作温度:

    -40°C ~ 85°C(TA)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    119-BBGA

  • 供应商器件封装:

    119-PBGA(14x22)

  • 描述:

    IC SRAM 9MBIT PARALLEL 119PBGA

供应商 型号 品牌 批号 封装 库存 备注 价格
ISSI
24+
NA/
417
优势代理渠道,原装正品,可全系列订货开增值税票
询价
ISSI(美国芯成)
24+
LQFP100(14x20)
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
ISSI
21+
TQFP100
7500
全新原装长期特价销售
询价
ISSI
2014
TQFP100
417
原装现货支持BOM配单服务
询价
ISSI
24+
TQFP100
12000
专营ISSI进口原装正品假一赔十可開17增值稅票
询价
ISSI
25+
TQFP100
880000
明嘉莱只做原装正品现货
询价
ISSI Integrated Silicon Solut
25+
119-BBGA
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
ISSI
23+
100-TQFP(14x20)
1389
专业分销产品!原装正品!价格优势!
询价
ISSI,
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
询价
ISSI
2450+
TQFP100
8850
只做原装正品假一赔十为客户做到零风险!!
询价