DESCRIPTION

TheISSI IS61LV12824 is a high-speed, static RAM organized as 131,072 words by 24 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power consumption.

FEATURES

• High-speed access time: 8, 10 ns

• CMOS low power operation

— 756 mW (max.) operating @ 8 ns

— 36 mW (max.) standby @ 8 ns

• TTL compatible interface levels

• Single 3.3V power supply

• Fully static operation: no clock or refresh required

• Three state outputs

• Available in 119-pin Plastic Ball Grid Array (PBGA) and 100-pin TQFP packages.

• Industrial temperature available

• Lead-free available

IS61LV12824-10TQLI属于集成电路（IC） > 存储器。北京矽成半导体有限公司制造生产的IS61LV12824-10TQLI存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。