512Mx16 8Gb DDR3 SDRAM

FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 800 MHz • 8 internal banks for concurrent operation • 8n-Bit pre-fetch architecture •

文件：3.94453 Mbytes 页数：79 Pages

ISSI

矽成半导体

512Mx16 8Gb DDR3 SDRAM

FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 800 MHz • 8 internal banks for concurrent operation • 8n-Bit pre-fetch architecture •

文件：3.94453 Mbytes 页数：79 Pages

ISSI

矽成半导体

512Mx16 8Gb DDR3 SDRAM

FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 800 MHz • 8 internal banks for concurrent operation • 8n-Bit pre-fetch architecture •

文件：3.94453 Mbytes 页数：79 Pages

ISSI

矽成半导体

512Mx16 8Gb DDR3 SDRAM

FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 800 MHz • 8 internal banks for concurrent operation • 8n-Bit pre-fetch architecture •

文件：3.94453 Mbytes 页数：79 Pages

ISSI

矽成半导体

DDR3 SDRAM

·Bidirectional differential data strobe\n·Data masking per byte on Write commands\n·Programmable burst length of 4 or 8\n·Programmable CAS Latency\n·Auto-Refresh and Self-Refresh Modes\n·OCD (Driver Adjustment)\n·ODT (On Die Termination) supported\n·Write Leveling\n·Long-term support

ISSI

矽成半导体