8M x 16Bits x 4Banks Mobile DDR SDRAM

Features • JEDEC standard 1.8V power supply • VDD = 1.8V, VDDQ = 1.8V • Four internal banks for concurrent operation • MRS cycle with address key programs - CAS latency 2, 3 (clock) - Burst length (2, 4, 8, 16) - Burst type (sequential & interleave) • Fully differential clock inputs (CK, /

文件：2.8536 Mbytes 页数：46 Pages

ISSI

矽成半导体

Mobile DDR SDRAM

·Double-data rate\n·Four internal banks with bank controls\n·Programmable Burst Length and CAS Latency\n·Power Savings with:- Partial Array Self Refresh (PASR)- Temperature Compenstate Self Refresh- Selectable Output Driver Strength- Deep Power Down\n·Long term support\n

ISSI

矽成半导体

8M x 16Bits x 4Banks Mobile DDR SDRAM

文件：1.60099 Mbytes 页数：45 Pages

ISSI

矽成半导体

BGA

ISSI

矽成半导体

上传：深圳市宇创芯科技有限公司

FBGA96

ISSI

矽成半导体

上传：深圳市富芯乐电子科技有限公司