OPIC LIGHT DETECTOR WITH BULLT-IN SIGNAL PROCESSING CIRCULT FOR LIGHT MODULATION SYSTEM

OPIC Light Detector with Built-In Signal Processing Circuit for Light Modulation System Applications 1. Optoelectronic switches 2. Copiers, printers, facsimiles

文件：490.18 Kbytes 页数：5 Pages

SHARPSharp Corporation

夏普

LINEAR OUTPUT TYPE OPIC LIGHT DETECTOR

■ Features 1. Liner output 2. Two package according to mounting method Side-view type (IS445) Top-view type (IS455) 3. Capable of output voltage level adjustment due to external resistor ■ Applications 1. Copiers

文件：66.6 Kbytes 页数：2 Pages

SHARPSharp Corporation

夏普

Linear Output Type OPIC Light Detector

■ Features 1. Liner output 2. Two package according to mounting method Side-view type (IS445) Top-view type (IS455) 3. Capable of output voltage level adjustment due to external resistor ■ Applications 1. Copiers

文件：56.6 Kbytes 页数：4 Pages

SHARPSharp Corporation

夏普

High Speed Response Type OPIC Light Detector

■ Features 1. High speed response (t PHL : TYP.230ns ) 2. Uses a pattern to allow for possible positional deviation of the semiconductor laser spot. 3. Compact, mini-flat package ■ Applications 1. Laser beam printers

文件：65.75 Kbytes 页数：5 Pages

SHARPSharp Corporation

夏普

High Speed Response Type OPIC Light Detector

■ Features 1. High speed response type (t PHL: TYP. 300ns) 2. Pattern with semiconductor laser spot positional deviation taken into consideration (Detector size : 0.5mm x 3.0mm ) 3. Open collector output 4. Angle adjustment by means of outer mounting resistance ■ Applications 1. Laser beam

文件：47.52 Kbytes 页数：4 Pages

SHARPSharp Corporation

夏普

64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous;

文件：913.2 Kbytes 页数：61 Pages

ISSI

矽成半导体

64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous;

文件：913.2 Kbytes 页数：61 Pages

ISSI

矽成半导体

64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous;

文件：913.2 Kbytes 页数：61 Pages

ISSI

矽成半导体

16Mx32, 32Mx16, 64Mx8 512Mb SDRAM

FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog

文件：1.57007 Mbytes 页数：66 Pages

ISSI

矽成半导体

16Mx32, 32Mx16, 64Mx8 512Mb SDRAM

FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog

文件：1.57007 Mbytes 页数：66 Pages

ISSI

矽成半导体