IS42S86400B-6TLI中文资料北京矽成数据手册PDF规格书

OVERVIEW

ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows.

FEATURES

• Clock frequency: 166, 143, 133 MHz

• Fully synchronous; all signals referenced to a positive clock edge

• Internal bank for hiding row access/precharge

• Power supply

Vdd Vddq

IS42/45S16320B 3.3V 3.3V

IS42S86400B 3.3V 3.3V

• LVTTL interface

• Programmable burst length

– (1, 2, 4, 8, full page)

• Programmable burst sequence: Sequential/Interleave

• Auto Refresh (CBR)

• Self Refresh

• 8K refresh cycles every 64 ms

• Random column address every clock cycle

• Programmable CAS latency (2, 3 clocks)

• Burst read/write and burst read/single write operations capability

• Burst termination by burst stop and precharge command

• Available in 54-pin TSOP-II and 54-ball W-BGA (x16 only)

• Operating Temperature Range:

Commercial: 0°C to +70°C

Industrial: -40°C to +85°C

Automotive, A1: -40°C to +85°C