16Mx32, 32Mx16, 64Mx8 512Mb SDRAM

FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog

文件：1.57007 Mbytes 页数：66 Pages

ISSI

矽成半导体

16Mx32, 32Mx16, 64Mx8 512Mb SDRAM

FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog

文件：1.57007 Mbytes 页数：66 Pages

ISSI

矽成半导体

16Mx32, 32Mx16, 64Mx8 512Mb SDRAM

FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog

文件：1.57007 Mbytes 页数：66 Pages

ISSI

矽成半导体

16Mx32, 32Mx16, 64Mx8 512Mb SDRAM

FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog

文件：1.57007 Mbytes 页数：66 Pages

ISSI

矽成半导体

16Mx32, 32Mx16, 64Mx8 512Mb SDRAM

FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog

文件：1.57007 Mbytes 页数：66 Pages

ISSI

矽成半导体

2(1)M words x 8(16) bits x 4 banks (64-mbit) synchronous dynamic ram

2(1)M Words x 8(16) Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

文件：1.49454 Mbytes 页数：68 Pages

ICSI

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW ISSIs 64Mb Synchronous DRAM IS42S16400 is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance.The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES • Cl

文件：557.68 Kbytes 页数：54 Pages

ISSI

矽成半导体

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW ISSIs 64Mb Synchronous DRAM IS42S16400 is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance.The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES • Cl

文件：557.68 Kbytes 页数：54 Pages

ISSI

矽成半导体

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW ISSIs 64Mb Synchronous DRAM IS42S16400 is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance.The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES • Cl

文件：557.68 Kbytes 页数：54 Pages

ISSI

矽成半导体

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW ISSIs 64Mb Synchronous DRAM IS42S16400 is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance.The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES • Cl

文件：557.68 Kbytes 页数：54 Pages

ISSI

矽成半导体