16Mx32, 32Mx16, 64Mx8 512Mb SDRAM

FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog

文件：1.57007 Mbytes 页数：66 Pages

ISSI

矽成半导体

256K x 32 x 2 (16-Mbit) SYNCHRONOUS GRAPHICS RAM

DESCRIPTION The ISSI IS42G32256 is a high-speed 16-Mbit CMOS Synchronous Graphics RAM organized as 256K words x 32 bits x 2 banks. With SGRAM, all input and output signals are synchronized with the rising edge of the system clock. Programmable Mode Register and Special Registers provide a choice

文件：456.64 Kbytes 页数：52 Pages

ISSI

矽成半导体

256K x 32 x 2 (16-Mbit) SYNCHRONOUS GRAPHICS RAM

DESCRIPTION The ISSI IS42G32256 is a high-speed 16-Mbit CMOS Synchronous Graphics RAM organized as 256K words x 32 bits x 2 banks. With SGRAM, all input and output signals are synchronized with the rising edge of the system clock. Programmable Mode Register and Special Registers provide a choice

文件：456.64 Kbytes 页数：52 Pages

ISSI

矽成半导体

256K x 32 x 2 (16-Mbit) SYNCHRONOUS GRAPHICS RAM

DESCRIPTION The ISSI IS42G32256 is a high-speed 16-Mbit CMOS Synchronous Graphics RAM organized as 256K words x 32 bits x 2 banks. With SGRAM, all input and output signals are synchronized with the rising edge of the system clock. Programmable Mode Register and Special Registers provide a choice

文件：456.64 Kbytes 页数：52 Pages

ISSI

矽成半导体

256K x 32 x 2 (16-Mbit) SYNCHRONOUS GRAPHICS RAM

DESCRIPTION The ISSI IS42G32256 is a high-speed 16-Mbit CMOS Synchronous Graphics RAM organized as 256K words x 32 bits x 2 banks. With SGRAM, all input and output signals are synchronized with the rising edge of the system clock. Programmable Mode Register and Special Registers provide a choice

文件：456.64 Kbytes 页数：52 Pages

ISSI

矽成半导体

16Mx32, 32Mx16, 64Mx8 512Mb SDRAM

FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog

文件：1.57007 Mbytes 页数：66 Pages

ISSI

矽成半导体

16Mx32, 32Mx16, 64Mx8 512Mb SDRAM

FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog

文件：1.57007 Mbytes 页数：66 Pages

ISSI

矽成半导体

16Mx32, 32Mx16, 64Mx8 512Mb SDRAM

FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog

文件：1.57007 Mbytes 页数：66 Pages

ISSI

矽成半导体

16Mx32, 32Mx16, 64Mx8 512Mb SDRAM

FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog

文件：1.57007 Mbytes 页数：66 Pages

ISSI

矽成半导体

16Mx32, 32Mx16, 64Mx8 512Mb SDRAM

FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog

文件：1.57007 Mbytes 页数：66 Pages

ISSI

矽成半导体