IRLL024ZTRPBF

N-Channel60-V(D-S)MOSFET

IRLR024

PowerMOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes

IRLR024

5-BITPROGRAMMABLESYNCHRONOUSBUCK,NON-SYNCHRONOUS,ADJUSTABLELDOAND200mAON-BOARDLDO

DESCRIPTION TheIRU3007controllerICisspecificallydesignedtomeetIntelspecificationforPentiumIIämicroprocessorapplicationsaswellasthenextgenerationofP6familyprocessors.TheIRU3007providesasinglechipcontrollerICfortheVcore,LDOcontrollerforGTL+andaninternal20

IRLR024

PowerMOSFET

IRLR024

PowerMOSFET

IRLR024

PowerMOSFET

IRLR024

PowerMOSFET

FEATURES •DynamicdV/dtrating •Surface-mount(IRLR024,SiHLR024) •Straightlead(IRLU024,SiHLU024) •Availableintapeandreel •Logic-levelgatedrive •RDS(on)specifiedatVGS=4Vand5V •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.v

IRLR024A

iscN-ChannelMOSFETTransistor

IRLR024N

HEXFETPowerMOSFET

Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewel

IRLR024N

N-ChannelMOSFETTransistor

•DESCRITION •FastSwitching •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤65mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation