IRL630STRRPBFA

Power MOSFET

IRLHM630

SmallPowIRMOSFETs

IRLHM630PBF

BatteryOperatedDCMotorInverterMOSFET

IRLHM630PBF

BatteryOperatedDCMotorInverterMOSFET

IRLHM630TRPBF

BatteryOperatedDCMotorInverterMOSFET

IRLI630A

ADVANCEDPOWERMOSFET

BVDSS=200V RDS(on)=0.4Ω ID=9A FEATURES ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦150°COperatingTemperature ♦LowerLeakageCurrent:10µA(Max.)@VDS=200V ♦LowerRDS(ON):0.

IRLI630A

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=0.4Ω ID=9A FEATURES ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦150°COperatingTemperature ♦LowerLeakageCurrent:10µA(Max.)@VDS=200V ♦LowerRDS(ON):0.

IRLI630A

iscN-ChannelMOSFETTransistor

IRLI630G

PowerMOSFET(Vdss=200V,Rds(on)=0.40ohm,Id=6.2A)

VDSS=200V RDS(on)=0.40Ω ID=6.2A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.TheTO-220Fullpakeliminatestheneedforadditionalins

IRLI630G

PowerMOSFET

VDS(V)200 RDS(on)(Ω)VGS=5.0V0.40 Qg(Max.)(nC)40 Qgs(nC)5.5 Qgd(nC)24 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivenes