5mm Infrared LED , T-1 3/4

Descriptions • EVERLIGHT’s Infrared Emitting Diode (IR333C) is a high intensity diode , molded in a water clear plastic package. • The device is spectrally matched with phototransistor , photodiode and infrared receiver module. Features • High reliability • High radiant intensity • Peak wave

文件：183.96 Kbytes 页数：7 Pages

Everlight

台湾亿光

HEXFET Power MOSFET

Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel

文件：89.37 Kbytes 页数：8 Pages

IRF

N-Channel MOSFET Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤6.5mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：338.58 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Process Technology Ultra Low On-Resistance

Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know

文件：124.65 Kbytes 页数：10 Pages

IRF

HEXFET Power MOSFET

Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know

文件：206.53 Kbytes 页数：10 Pages

IRF

Advanced Process Technology

Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel

文件：164.73 Kbytes 页数：9 Pages

IRF

丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

• FEATURES • With TO-263( D2PAK ) packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switching a

文件：263.54 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Process Technology Ultra Low On-Resistance

Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know

文件：124.65 Kbytes 页数：10 Pages

IRF

HEXFET Power MOSFET

Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know

文件：206.53 Kbytes 页数：10 Pages

IRF

HEXFET Power MOSFET

文件：133.79 Kbytes 页数：10 Pages

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司