TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.32ohm, Id=18.8A)

500V N-CHANNEL Features: ■ Single Event effect (SEE) Hardened ■ Ultra Low RDS(on) ■ Low Total Gate Change ■ Proton Tolerant ■ Simple Drive Requirements ■ Ease of Paralleling ■ Hermetically Sealed ■ Light Weight

文件：132.89 Kbytes 页数：4 Pages

IRF

Simple Drive Requirements

文件：169.04 Kbytes 页数：8 Pages

IRF

Simple Drive Requirements

文件：169.04 Kbytes 页数：8 Pages

IRF

Rad hard MOSFETs

\n优势:;

Infineon

英飞凌

抗辐射 MOSFET

\n优势:;

Infineon

英飞凌