INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=10A)

Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of

文件：274.16 Kbytes 页数：7 Pages

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INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=6.5A)

Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of

文件：253.64 Kbytes 页数：6 Pages

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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=6.5A)

Description Co-packaged IGBTs are a natural extension of International Rectifiers well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power s

文件：427.69 Kbytes 页数：8 Pages

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Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes 页数：35 Pages

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Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes 页数：35 Pages

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Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes 页数：35 Pages

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Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes 页数：35 Pages

IRF

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes 页数：35 Pages

IRF

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes 页数：35 Pages

IRF

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes 页数：35 Pages

IRF