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AUIRG4PC40S-E

InsulatedGateBipolarTransistor

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AUIRG4PC40S-E

InsulatedGateBipolarTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

G4PC40U

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.1.72V,@Vge=15V,Ic=20A)

Benefits •Generation4IGBTsofferhighestefficiencyavailable •IGBTsoptimizedforspecifiedapplicationconditions •Designedtobeadrop-inreplacementforequivalent industry-standardGeneration3IRIGBTs Features •UltraFast:Optimizedforhighoperating frequencies8-40kHz

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

G4PC40W

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.05V,@Vge=15V,Ic=20A)

Benefits •Lowerswitchinglossesallowmorecost-effective operationthanpowerMOSFETsupto150kHz (hardswitchedmode) •Ofparticularbenefittosingle-endedconvertersand boostPFCtopologies150Wandhigher •Lowconductionlossesandminimalminority-carrier recombinat

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRG4PC40

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.05V,@Vge=15V,Ic=20A)

Benefits •Lowerswitchinglossesallowmorecost-effective operationthanpowerMOSFETsupto150kHz (hardswitchedmode) •Ofparticularbenefittosingle-endedconvertersand boostPFCtopologies150Wandhigher •Lowconductionlossesandminimalminority-carrier recombinat

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRG4PC40

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.32V,@Vge=15V,Ic=31A)

StandardSpeedIGBT Features •Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequencies(

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRG4PC40

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.50V,@Vge=15V,Ic=27A)

FastCoPackIGBT Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-packagedwithHEXFREDTMultrafast,ultra-sof

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRG4PC40

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.50V,@Vge=15V,Ic=27A)

FastSpeedIGBT Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IndustrystandardTO-247ACpackage Benefits •Gener

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRG4PC40F

FitRate/EquivalentDeviceHours

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRG4PC40F

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.50V,@Vge=15V,Ic=27A)

FastSpeedIGBT Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IndustrystandardTO-247ACpackage Benefits •Gener

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRG4PC40FD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.50V,@Vge=15V,Ic=27A)

FastCoPackIGBT Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-packagedwithHEXFREDTMultrafast,ultra-sof

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRG4PC40FD

FitRate/EquivalentDeviceHours

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRG4PC40FDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recoveryanti-pa

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRG4PC40FDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRG4PC40FPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRG4PC40FPBF

INSULATEDGATEBIPOLARTRANSISTORFastSpeedIGBT

Features •Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode) •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IndustrystandardTO-247ACpackage •Lead-Free Benefit

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRG4PC40K

FitRate/EquivalentDeviceHours

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRG4PC40K

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.1V,@Vge=15V,Ic=25A)

ShortCircuitRatedUltraFastIGBT Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovideshigherefficiencythanGeneration3 •IndustrystandardTO-247ACpackage Bene

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRG4PC40KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.1V,@Vge=15V,Ic=25A)

ShortCircuitRatedUltraFastIGBT Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBT

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRG4PC40KD

FitRate/EquivalentDeviceHours

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

详细参数

  • 型号:

    IRG 4PC40WPBF

  • 制造商:

    International Rectifier

供应商型号品牌批号封装库存备注价格
IR
23+
TO-247
8000
原装正品
询价
IR
22+
6000
终端可免费供样,支持BOM配单
询价
IR
23+
8000
只做原装现货
询价
23+
N/A
35700
正品授权货源可靠
询价
IR
SOP-8
265209
假一罚十原包原标签常备现货!
询价
IR
23+
SOP-8
50000
全新原装正品现货,支持订货
询价
IR
21+
SOP8
10000
原装现货假一罚十
询价
IR
2022
SOP-8
80000
原装现货,OEM渠道,欢迎咨询
询价
IR
21+ROHS
SOP-8
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
IR
23+
NA/
3368
原装现货,当天可交货,原型号开票
询价
更多IRG 4PC40WPBF供应商 更新时间2024-4-27 10:01:00