Power MOSFET

DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK

文件：1.5825 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9210, SiHFR9210) • Straight lead (IRFU9210, SiHFU9210) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

文件：888.74 Kbytes 页数：13 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.9A)

DESCRIPTION The HEXFET technology is the key to International Rectifiers advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The D-

文件：172.29 Kbytes 页数：6 Pages

IRF

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= -1.9A@ TC=25℃ ·Drain Source Voltage- : VDSS= -200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3Ω(Max)@VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：345.28 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP

文件：4.45842 Mbytes 页数：7 Pages

KERSEMI

Power MOSFET

DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP

文件：4.09862 Mbytes 页数：7 Pages

KERSEMI

Power MOSFET

DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP

文件：4.09862 Mbytes 页数：7 Pages

KERSEMI

Power MOSFET

DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP

文件：4.46201 Mbytes 页数：7 Pages

KERSEMI

Power MOSFET

DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP

文件：4.45842 Mbytes 页数：7 Pages

KERSEMI

Power MOSFET

DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP

文件：4.46201 Mbytes 页数：7 Pages

KERSEMI