IRFR9210资料datasheet下载批发供应Vishay-114ic电子网

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IRFR9210	文件：172.29 Kbytes Page：6 Pages	Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.9A) DESCRIPTION TheHEXFETtechnologyisthekeytoInternationalRectifiersadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHEXFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheD-	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFR9210	文件：1.5825 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAK	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFR9210	文件：4.45842 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9210	文件：4.09862 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9210	文件：4.09862 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9210	文件：4.46201 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9210	文件：888.74 Kbytes Page：13 Pages	Power MOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR9210,SiHFR9210) •Straightlead(IRFU9210,SiHFU9210) •Availableintapeandreel •P-channel •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFR9210	文件：345.28 Kbytes Page：2 Pages	isc P-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=-1.9A@TC=25℃ ·DrainSourceVoltage- :VDSS=-200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3Ω(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IRFR9210PBF	文件：1.5825 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAK	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFR9210PBF	文件：4.09862 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9210PBF	文件：4.45842 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9210PBF	文件：4.46201 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9210PBF	文件：4.09862 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9210PBF	文件：888.74 Kbytes Page：13 Pages	Power MOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR9210,SiHFR9210) •Straightlead(IRFU9210,SiHFU9210) •Availableintapeandreel •P-channel •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFR9210PBF-BE3	文件：888.74 Kbytes Page：13 Pages	Power MOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR9210,SiHFR9210) •Straightlead(IRFU9210,SiHFU9210) •Availableintapeandreel •P-channel •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFR9210TR	文件：1.5825 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAK	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFR9210TR	文件：4.09862 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9210TRA	文件：4.09862 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9210TRA	文件：4.45842 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9210TRA	文件：4.09862 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI

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详细参数

型号：
IRFR921
功能描述：
MOSFET P-Chan 200V 1.9 Amp
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市宏捷佳电子科技有限公司	IRFR9210	IR/VISHAY	23+	TO-252	12300	全新原装真实库存含13点增值税票!	询价
深圳市一线半导体有限公司	IRFR9210	IR	05+	TO-252	129		询价
深圳市力通伟业半导体有限公司	IRFR9210	IR	13+	TO-252	53	特价热销现货库存	询价
深圳市昌和盛利电子有限公司	IRFR9210	IR	23+	TO-252	35890		询价
深圳市星佑电子有限公司	IRFR9210	IR	06+	TO-252	15000	原装	询价
深圳市勤思达科技有限公司	IRFR9210	IR	1415+	TO-252(DPAK)	28500	全新原装正品,优势热卖	询价
深圳市博浩通科技有限公司	IRFR9210	IR	23+	D-Pak	8600	全新原装现货	询价
齐创科技(上海,北京,青岛)有限公司	IRFR9210	IR	23+	TO252	5000	原装正品,假一罚十	询价
深圳市鑫宇杨电子科技有限公司	IRFR9210	IR	2020+	TO252	350000	100%进口原装正品公司现货库存	询价
深圳市英科美电子有限公司	IRFR9210	IR	2021+	SOP	6010	百分百原装正品	询价

更多IRFR921供应商更新时间2024-6-17 15:30:00

详细参数

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