The D-PAK is designed for surface mounting using vapor phase,infrared,or wave soldering techniques.

Features VDS (V) = 100V ID = 16A (VGS = 10V) RDS(ON) =115mW (VGS = 10V)

文件：772.95 Kbytes 页数：7 Pages

UMW

友台半导体

MOSFET

Description The D-PAK is designed for surface mounting using vapor phase,infrared,or wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Features VDS (V) = 100V ID = 16A (VGS = 10V) RDS(ON) =115mW (VGS = 10V)

文件：723.93 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：152.71 Kbytes 页数：11 Pages

IRF

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：397.99 Kbytes 页数：11 Pages

IRF

Ultra Low On-Resistance

文件：397.99 Kbytes 页数：11 Pages

IRF

N-Channel 100 V (D-S) MOSFET

文件：979.57 Kbytes 页数：7 Pages

VBSEMI

微碧半导体