| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：218.1 Kbytes 页数：11 Pages | IRF | IRF | ||
N-Channel MOSFET Transistor • DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤18mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation 文件：335.72 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | ||
HEXFET짰 Power MOSFET Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features co 文件：688.61 Kbytes 页数：13 Pages | Infineon 英飞凌 | Infineon | ||
AUTOMOTIVE MOSFET Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features co 文件：275.12 Kbytes 页数：11 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features co 文件：4.26598 Mbytes 页数：11 Pages | KERSEMI | KERSEMI | ||
AUTOMOTIVE MOSFET Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features co 文件：4.26849 Mbytes 页数：11 Pages | KERSEMI | KERSEMI | ||
HEXFET짰 Power MOSFET Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features co 文件：688.61 Kbytes 页数：13 Pages | Infineon 英飞凌 | Infineon | ||
Advanced Process Technology 文件：365.44 Kbytes 页数：12 Pages | IRF | IRF | ||
Advanced Process Technology 文件：365.44 Kbytes 页数：12 Pages | IRF | IRF | ||
HEXFET Power MOSFET 文件：4.70307 Mbytes 页数：12 Pages | KERSEMI | KERSEMI |
详细参数
- 型号：
IRFR3710
- 功能描述：
MOSFET 100V 1 N-CH HEXFET 18mOhms 69nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
24+ |
TO252 |
25000 |
十佳优质供应商，十年信誉，只做全新原装正品现货，以优势说话！ |
询价 | ||
IR |
19+ |
TO-252 |
18500 |
询价 | |||
INFINEON |
22+ |
sot |
6600 |
正品渠道现货,终端可提供BOM表配单。 |
询价 | ||
Infineon(英飞凌) |
24+ |
TO252 |
3524 |
原厂直供,支持账期,免费供样,技术支持 |
询价 | ||
IR |
23+ |
SOT-252 |
65400 |
询价 | |||
INFINEON/英飞凌 |
24+ |
TO-252 |
18457 |
原装进口假一罚十 |
询价 | ||
INFINEON TECHNOLOGIES AG |
25+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
询价 | ||
INFINEON/英飞凌 |
2021+ |
TO-263 |
9000 |
原装现货,随时欢迎询价 |
询价 | ||
INFINEON |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
Infineon(英飞凌) |
23+ |
25650 |
新到现货,只做原装进口 |
询价 |
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