丝印：FR1205；Package：TO-252；Ultra LowOn-Resistance

Features VDS (V) = 55V ID= 44A (VGS=10V) RDS(ON) 27m (VGS = 10V)

文件：1.09783 Mbytes 页数：7 Pages

UMW

友台半导体

丝印：FR1205；Package：TO-252；MOSFET

Features VDS (V) = 55V ID= 44A (VGS=10V) RDS(ON)

文件：1.14541 Mbytes 页数：7 Pages

EVVOSEMI

翊欧

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：398.79 Kbytes 页数：11 Pages

IRF

丝印：FR1205；Package：TO-252-3L；N-Channel Enhancement Mode MOSFE

Features | ® Vos =60V,lo =28A Rosny

文件：2.19105 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

N-Channel 6 0-V (D-S) MOSFET

文件：988.71 Kbytes 页数：6 Pages

VBSEMI

微碧半导体

Ultra Low On-Resistance

文件：4.02641 Mbytes 页数：10 Pages

KERSEMI

N-Channel 6 0-V (D-S) MOSFET

文件：988.67 Kbytes 页数：6 Pages

VBSEMI

微碧半导体