IRFR/U9120N规格书批发采购无锡固电KERSEMI-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
IRFR/U9120N	文件：3.88766 Mbytes Page：10 Pages	HEXFET Power MOSFET	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9120	文件：1.89003 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFR9120	文件：73.44 Kbytes Page：7 Pages	5.6A,100V,0.600Ohm,P-ChannelPowerMOSFETs TheseadvancedpowerMOSFETsaredesigned,tested,andguaranteedtowithstandaspecificlevelofenergyintheavalanchebreakdownmodeofoperation.TheyareP-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switching	Intersil Intersil Corporation	Intersil
IRFR9120	文件：173.05 Kbytes Page：6 Pages	PowerMOSFET(Vdss=-100V,Rds(on)=0.60ohm,Id=-5.6A) DESCRIPTION ThirdGenerationHEXFETsfromInternatioalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •SurfaceMount(IRFR9120) •StraightLead	IRF International Rectifier	IRF
IRFR9120	文件：4.04661 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9120	文件：4.40688 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9120	文件：4.28393 Mbytes Page：7 Pages	DynamicdV/dtRating DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9120	文件：4.40685 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9120	文件：321.56 Kbytes Page：2 Pages	iscP-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IRFR9120	文件：1.18471 Mbytes Page：13 Pages	PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR9120,SiHFR9120) •Straightlead(IRFU9120,SiHFU9120) •Availableintapeandreel •P-channel •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFR9120	文件：1.6735 Mbytes Page：5 Pages	-100VP-ChannelEnhancementModeMOSFET GeneralFeatures Vbs=-100V,Ip=-8A Rosin)	UMWUMW Rightway Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司(简称UMW?)	UMW
IRFR9120	文件：1.59396 Mbytes Page：5 Pages	-100VP-ChannelEnhancementModeMOSFET GeneralFeatures VDS=-100V,ID=-8A RDS(ON)	EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧	EVVOSEMI
IRFR9120N	文件：117.52 Kbytes Page：10 Pages	PowerMOSFET(Vdss=-100V,Rds(on)=0.48ohm,Id=-6.6A)	IRF International Rectifier	IRF
IRFR9120N	文件：883.59 Kbytes Page：10 Pages	UltraLowOn-Resistance Description TheD-Pakisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestraightleadversion(IRFUseries)isforthrough-holemountingapplications.Powerdissipationlevelsupto1.5wattsarepossibleintypicalsurfacemountapplications.	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9120N	文件：1.59396 Mbytes Page：5 Pages	-100VP-ChannelEnhancementModeMOSFET GeneralFeatures VDS=-100V,ID=-8A RDS(ON)	EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧	EVVOSEMI
IRFR9120NPBF	文件：262.32 Kbytes Page：11 Pages	HEXFETPowerMOSFET(VDSS=-100V,RDS(on)=0.48廓,ID=-6.6A) HEXFET®PowerMOSFET	IRF International Rectifier	IRF
IRFR9120NPBF	文件：263.29 Kbytes Page：11 Pages	ULTRALOWONRESISTANCE	IRF International Rectifier	IRF
IRFR9120NPBF	文件：3.85223 Mbytes Page：10 Pages	HEXFETPOWERMOSFET HEXFET®PowerMOSFET	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9120NPBF	文件：3.87272 Mbytes Page：10 Pages	ULTRALOWON-RESISTANCE HEXFET®PowerMOSFET	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9120NTR	文件：1.6735 Mbytes Page：5 Pages	-100VP-ChannelEnhancementModeMOSFET GeneralFeatures Vbs=-100V,Ip=-8A Rosin)	UMWUMW Rightway Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司(简称UMW?)	UMW

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市河锋鑫科技有限公司	IRFR/U9N20D	IR	22+	D-PAK/I-PAK	6000	终端可免费供样,支持BOM配单	询价
深圳市创新迹电子有限公司	IRFR/U9N20D	IR	23+	D-PAK/I-PAK	8000	专注配单,只做原装进口现货	询价
深圳市安富世纪电子有限公司	IRFR/U9N20D	IR	23+	D-PAK/I-PAK	8000	只做原装现货	询价
天津市博通航睿技术有限公司	IRFR/U9N20D	IR	23+	D-PAK/I-PAK	7000		询价
深圳市昌和盛利电子有限公司	IRFR010	IR	23+	TO-252	35890		询价
深圳市一线半导体有限公司	IRFR010	IR	03+	TO-3	200		询价
深圳市勤思达科技有限公司	IRFR010	IR	1415+	TO-252	28500	全新原装正品,优势热卖	询价
深圳市博浩通科技有限公司	IRFR010	IR	23+	原厂原装	6000	全新原装	询价
深圳市星佑电子有限公司	IRFR010	IR	05+	原厂原装	4355	只做全新原装真实现货供应	询价
深圳市弘为电子有限公司	IRFR010	IR	16+	原厂封装	1836	原装现货假一罚十	询价

更多IRFR/U9120N供应商更新时间2024-9-24 14:00:00

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