Power MOSFET

FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www.

文件：225.15 Kbytes 页数：11 Pages

VishayVishay Siliconix

威世科技

50A AUTOMOTIVE BUTTON DIODE

Diffused Junction Low Leakage Low Cost High Surge Current Capability Low Cost Construction Utilizing Void-Free Molded Plastic Technique

文件：44.58 Kbytes 页数：3 Pages

WTE

Won-Top Electronics

High Current Automobile Rectifier

文件：377.83 Kbytes 页数：3 Pages

HY

虹扬科技

VISHAY/威世
TO-247

VISHAY/威世

上传：深圳市华芯伟电子科技有限公司

SST
SOP8

SST

Silicon Storage Technology, Inc

上传：深圳市得捷芯城科技有限公司