Trans MOSFET N-CH 500V 14A 3-Pin(3+Tab) TO-247AD

NJS

Power MOSFET(Vdss=500V, Rds(on)=0.40ohm, Id=14A)

VDSS = 500V RDS(on) = 0.40Ω ID = 14A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds

文件：340.78 Kbytes 页数：8 Pages

IRF

Power MOSFET

VDS (V) 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 74 Qgs (nC) 19 Qgd (nC) 35 Configuration Single DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFET technology the device improvement

文件：1.54602 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.62434 Mbytes 页数：11 Pages

VishayVishay Siliconix

威世威世科技公司