Power MOSFET

FEATURES • Ultra low gate charge • Reduced gate drive requirement • Enhanced 30 V VGS rating • Reduced Ciss, Coss, Crss • Isolated central mounting hole • Dynamic dV/dt rated • Repetitive avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/do

文件：311.46 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=400V, Rds(on)=0.20ohm, Id=23A)

Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The

文件：343.84 Kbytes 页数：8 Pages

IRF

Power MOSFET

FEATURES • Ultra low gate charge • Reduced gate drive requirement • Enhanced 30 V VGS rating • Reduced Ciss, Coss, Crss • Isolated central mounting hole • Dynamic dV/dt rated • Repetitive avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/do

文件：311.46 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司

HEXFET Power MOSFET

Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The

文件：347.88 Kbytes 页数：8 Pages

IRF

isc N-Channel MOSFET Transistor

文件：325.19 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

文件：260.38 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.04588 Mbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.06844 Mbytes 页数：11 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.04588 Mbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.06844 Mbytes 页数：11 Pages

VishayVishay Siliconix

威世威世科技公司