Power MOSFET

FEATURES • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simpler Drive Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity • Lead (Pb)-free Availab

文件：159.51 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Superfast body diode eliminates the need for external diodes in ZVS applications • Lower gate charge results in simpler drive requirements • Enhanced dV/dt capabilities offer improved ruggedness • Higher gate voltage threshold offers improved noise immunity • Material categoriza

文件：236.46 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=500V, Rds(on)=0.190ohm, Id=23A)

Features and Benefits • SuperFast body diode eliminates the need for external diodes in ZVS applications • Lower Gate charge results in simpler drive requirements • Enhanced dV/dt capabilities offer improved ruggedness • Higher Gate voltage threshold offers improved noise immunity Application

文件：104.21 Kbytes 页数：8 Pages

IRF

iscN-Channel MOSFET Transistor

• DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) =0.235Ω (MAX) • Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：444.61 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

FEATURES • Superfast body diode eliminates the need for external diodes in ZVS applications • Lower gate charge results in simpler drive requirements • Enhanced dV/dt capabilities offer improved ruggedness • Higher gate voltage threshold offers improved noise immunity • Material categoriza

文件：236.46 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simpler Drive Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity • Lead (Pb)-free Availab

文件：159.51 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

HEXFET Power MOSFET ( VDSS = 500V , RDS(on)typ. = 0.190廓 , Trr typ. = 170ns , ID = 23A )

Features and Benefits • SuperFast body diode eliminates the need for external diodes in ZVS applications • Lower Gate charge results in simpler drive requirements • Enhanced dV/dt capabilities offer improved ruggedness • Higher Gate voltage threshold offers improved noise immunity • Lead-Free

文件：202.13 Kbytes 页数：9 Pages

IRF

Power MOSFET

文件：200.94 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件：223.5 Kbytes 页数：11 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件：200.94 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司