IRFP120N20规格书市场行情无锡固电IXYS-114ic电子网

首页 >IRFP120N20>规格书列表

零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
IIPP120N20NFD	文件：338.17 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPP120N20NFD	文件：338.17 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPP120N20NFD	文件：1.30327 Mbytes Page：12 Pages	MetalOxideSemiconductorFieldEffectTransistor	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IXFH120N20P	文件：601.57 Kbytes Page：5 Pages	PolarHTHiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •InternationalStandardPackages •AvalancheRated •FastIntrinsicDiode •LowQG •LowRDS(on) •LowDrain-to-TabCapacitance •LowPackageInductance Advantages •EasytoMount •SpaceSavings	IXYS IXYS Integrated Circuits Division	IXYS
IXFK120N20	文件：328.53 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=120A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=17mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFK120N20	文件：48.08 Kbytes Page：2 Pages	HiPerFETPowerMOSFETs SingleMOSFETDie Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS) rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier Applicatio	IXYS IXYS Integrated Circuits Division	IXYS
IXFK120N20P	文件：328.55 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=120A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFK120N20P	文件：601.57 Kbytes Page：5 Pages	PolarHTHiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •InternationalStandardPackages •AvalancheRated •FastIntrinsicDiode •LowQG •LowRDS(on) •LowDrain-to-TabCapacitance •LowPackageInductance Advantages •EasytoMount •SpaceSavings	IXYS IXYS Integrated Circuits Division	IXYS
IXFK120N20P	文件：135.75 Kbytes Page：5 Pages	PolarHiPerFETPowerMOSFET	IXYS IXYS Integrated Circuits Division	IXYS
IXFN120N20	文件：69.86 Kbytes Page：2 Pages	HiPerFETPowerMOSFETs HiPerFETTMPowerMOSFETsSingleMOSFETDie N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features •EncapsulatingepoxymeetsUL94V-0,flammabilityclassification •Internationalstandardpackage •miniBLOC,withAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess	IXYS IXYS Integrated Circuits Division	IXYS
IXFN120N20	文件：535.83 Kbytes Page：3 Pages	N-ChannelMOSFET DESCRIPTION ·DrainCurrent-ID=120A@TC=25℃ ·DrainSourceVoltage -VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=17mΩ(Max)@VGS=10V APPLICATIONS ·DC-DCconverters ·DCchoppers ·Batterychargers ·Temperatureandlightingcontrols ·Switched-modeandresonant-modepowersu	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFR120N20	文件：372.04 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=90A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=23mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFR120N20	文件：34.51 Kbytes Page：2 Pages	HiPerFETTMPowerMOSFETsISOPLUS247 HiPerFET™PowerMOSFET(ElectricallyIsolatedTab) N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features •SiliconChiponDirect-CopperBond(DCB)Substrate •IsolatedMountingSurface •2500V~ElectricalIsolation •AvalancheRated •FastIntrinsicRectifier •Lo	IXYS IXYS Integrated Circuits Division	IXYS
IXFR120N20	文件：180.52 Kbytes Page：3 Pages	PowerMOSFET	IXYS IXYS Integrated Circuits Division	IXYS
IXFX120N20	文件：48.08 Kbytes Page：2 Pages	HiPerFETPowerMOSFETs SingleMOSFETDie Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS) rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier Applicatio	IXYS IXYS Integrated Circuits Division	IXYS
IXFX120N20	文件：367.55 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=120A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=17mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXTK120N20P	文件：295.11 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXTK120N20P	文件：196.99 Kbytes Page：5 Pages	N-ChannelEnhancementModeAvalancheRated	IXYS IXYS Integrated Circuits Division	IXYS
IXTQ120N20P	文件：196.99 Kbytes Page：5 Pages	N-ChannelEnhancementModeAvalancheRated	IXYS IXYS Integrated Circuits Division	IXYS
IXTQ120N20P	文件：301 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC

12 >>>

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市明嘉莱科技有限公司	IRFP120N20	IR	24+	TO 247	161505	明嘉莱只做原装正品现货	询价
深圳市国宇半导体科技有限公司	IRFP120N20	IR/VISHAY	23+	TO-247	10000	公司只做原装正品	询价
深圳市河锋鑫科技有限公司	IRFP120N20	IR	22+	TO-247AC	6000	十年配单,只做原装	询价
易创佳业科技（深圳）有限公司	IRFP120N20	IR/VISHAY	23+	TO-247	6000	原装正品，支持实单	询价
深圳市创新迹电子有限公司	IRFP120N20	IR/VISHAY	22+	TO-247	25000	只做原装进口现货,专注配单	询价
深圳市惊羽科技有限公司	IRFP120N20	VISHAY-威世	24+25+/26+27+	TO-247-3	78800	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价
深圳市宏捷佳电子科技有限公司	IRFP120N20	IR/VISHAY	24+	TO-247	12300	独立分销商,公司只做原装,诚心经营,免费试样正品保证	询价
深圳市安富世纪电子有限公司	IRFP120N20	IR	23+	TO-247AC	8000	只做原装现货	询价
深圳市维尔达电子有限公司	IRFP120NTRPBF	IR-internat	2023+	DIP	80000	一级代理/分销渠道价格优势十年芯程一路只做原装正品	询价
贸泽芯城（深圳）电子科技有限公司	IRFP121	IR	21+ROHS	TO-247	10000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价

更多IRFP120N20供应商更新时间2024-6-3 17:06:00

相关规格书

相关库存