MOSFET

Features VDS (V) = 25V RDS(ON)

文件：376.51 Kbytes 页数：8 Pages

EVVOSEMI

翊欧

25V 单个 N 通道 HEXFET Power MOSFET, 采用 Micro 3封装

\n优势:\n• Optimized for broadest availability from distribution partners\n• Product qualification according to JEDEC standard\n• Optimized for 5V gate-drive voltage (called Logic level)\n• Industry standard surface-mount package\n• Capable of being wave-soldered;

Infineon

英飞凌

丝印：WBS1R；Package：SOT-23；Lower switching losses

Features VDS (V) = 25V RDS(ON) 24m (VGS = 10V) RDS(ON) 41m (VGS = 4.5V) Benefits Lower switching losses Multi-vendor compatibility Easier manufacturing Environmentally friendly Increased reliability

文件：474.14 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：WBS1R；Package：SOT-23；MOSFET

Features VDS (V) = 25V RDS(ON)

文件：376.51 Kbytes 页数：8 Pages

EVVOSEMI

翊欧

Load/ System Switch

文件：202.51 Kbytes 页数：10 Pages

IRF

Compatible with existing Surface Mount Techniques

文件：202.51 Kbytes 页数：10 Pages

IRF

Compatible with existing Surface Mount Techniques

文件：202.51 Kbytes 页数：10 Pages

IRF

丝印：X****；Package：SOT-23；HEXFETPower MOSFET

文件：202.51 Kbytes 页数：10 Pages

IRF

HEXFETPower MOSFET

文件：285.77 Kbytes 页数：2 Pages

ZPSEMIZP Semiconductor

至尚臻品

丝印：X****；Package：SOT-23；Load/ System Switch

文件：202.51 Kbytes 页数：10 Pages

IRF