首页 >IRFM014TRPBF>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
Fieldreplaceablebearingsandelectronics | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
AluminumorLexancupsavailable | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
EFD20HIGHFREQUENCYPoETRANSFORMER | ALLIED Allied Components International | ALLIED | ||
Implement3.3VdualusingAIC1730 | AIC AIC | AIC | ||
PolySwitchResettableDevices | MACOM Tyco Electronics | MACOM | ||
LowOn-Resistance | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
AUTOMOTIVEGRADE | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
AdvancedPlanarTechnologyLowOn-Resistance | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedPlanarTechnologyLowOn-Resistance | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AUTOMOTIVEGRADE | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
AUTOMOTIVEGRADE | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
HEXFET짰PowerMOSFET | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFET짰PowerMOSFET | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AUTOMOTIVEGRADE | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
AdvancedPlanarTechnologyLogic-LevelGateDrive Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedPlanarTechnologyLogic-LevelGateDrive Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedPlanarTechnologyLogic-LevelGateDrive Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
AdvancedPlanarTechnologyLogic-LevelGateDrive Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
SOT-223 |
6000 |
终端可免费供样,支持BOM配单 |
询价 | ||
IR |
23+ |
SOT-223 |
8000 |
只做原装现货 |
询价 | ||
isc |
2024 |
TO-220 |
2750 |
国产品牌isc,可替代原装 |
询价 | ||
IR |
TO-252 |
550 |
价格优势!军工IC一级分销商!可开增值税发票! |
询价 | |||
IR |
23+ |
7921 |
1005 |
全新原装现货 |
询价 | ||
IR |
90+ |
TO220-2 |
10 |
询价 | |||
IR |
24+ |
TO220-2() |
5000 |
全现原装公司现货 |
询价 | ||
IRF |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
IR |
18+ |
TO-254AA |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
IR |
18 |
200 |
进口原装正品优势供应QQ3171516190 |
询价 |
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