IRFC110R说明书PDF资料原装现货威世科技-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
IRFD110	文件：174.72 Kbytes Page：6 Pages	PowerMOSFET(Vdss=100V,Rds(on)=0.54ohm,Id=1.0A)	IRF International Rectifier	IRF
IRFD110	文件：132.41 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFD110	文件：52.55 Kbytes Page：6 Pages	1A,100V,0.600Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching	Intersil Intersil Corporation	Intersil
IRFD110	文件：156.17 Kbytes Page：9 Pages	PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Forautomaticinsertion •Endstackable •175°COperatingTemperature •Fastswitchingandeaseofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Third	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFD110PBF	文件：1.78348 Mbytes Page：8 Pages	HEXFETPowerMOSFET	IRF International Rectifier	IRF
IRFD110PBF	文件：132.41 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFD110PBF	文件：156.17 Kbytes Page：9 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFE110	文件：199.53 Kbytes Page：7 Pages	HEXFETTRANSISTORSSURFACEMOUNT(LCC-18) REPETITIVEAVALANCHEANDdv/dtRATED HEXFET®TRANSISTORS SURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesigners	IRF International Rectifier	IRF
IRFE110	文件：203 Kbytes Page：7 Pages	SimpleDriveRequirements	IRF International Rectifier	IRF
IRFE110	文件：70.03 Kbytes Page：1 Pages	MultipleSmall-SignalTransistors	MotorolaMotorola, Inc 摩托罗拉	Motorola
IRFF110	文件：328.66 Kbytes Page：7 Pages	3.5A,100V,0.600Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching	Intersil Intersil Corporation	Intersil
IRFF110	文件：176.97 Kbytes Page：5 Pages	PowerMOSField-EffectTransistors N-ChannelEnhancement-ModePowerField-EffectTransistors Features •SOAisPowerDissipationLimited •NanosecondSwitchingSpeeds •LinearTransferCharacteristics •HighInputImpedance •Majoritycarrierdevice	GESS GE Solid State	GESS
IRFF110	文件：16.64 Kbytes Page：1 Pages	N-ChannelMOSFETinaHermeticallysealedTO39	SEME-LAB Seme LAB	SEME-LAB
IRFF110	文件：474.27 Kbytes Page：2 Pages	IM-CHANIMELPOWERMOSFETsTO-39PACKAGE TheHEXFETtransistorsalsofeatureallofthewellestablishedadvantagesofMOSFETssuchasvoltagecontrol,freedomfromsecondbreakdown,veryfastswitching,easeofparalleling,andtemperaturestabilityoftheelectricalparameters. TheyarewellsuitedforapplicationssuchasswitchingD	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
IRFG110	文件：221.22 Kbytes Page：7 Pages	POWERMOSFETTHRU-HOLE(MO-036AB)	IRF International Rectifier	IRF
IRFG110	文件：26.09 Kbytes Page：2 Pages	14LEADDUALINLINEQUAD	SEME-LAB Seme LAB	SEME-LAB
IRFG110	文件：273.04 Kbytes Page：7 Pages	SimpleDriveRequirements	IRF International Rectifier	IRF
IRFG110	文件：273.04 Kbytes Page：7 Pages	POWERMOSFETTHRU-HOLE(MO-036AB)	IRF International Rectifier	IRF
IRFL110	文件：244.59 Kbytes Page：8 Pages	PowerMOSFET(Vdss=100V,Rds(on)=0.54ohm,Id=1.5A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderin	IRF International Rectifier	IRF
IRFL110	文件：1.45555 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •SurfaceMount •AvailableinTapeandReel •DynamicdV/dtRating •Repetitive	VishayVishay Siliconix 威世科技威世科技半导体	Vishay

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市河锋鑫科技有限公司	IRFC110R	IR	22+		6000	终端可免费供样,支持BOM配单	询价
深圳市安富世纪电子有限公司	IRFC110R	IR	23+		8000	只做原装现货	询价
天津市博通航睿技术有限公司	IRFC110R	IR	23+		7000		询价
深圳市振宏微科技有限公司	IRFC130	IR	23+	NA	291	专做原装正品,假一罚百!	询价
深圳市威雅利发展有限公司	IRFC140	IR	1308+	裸片	844	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市博中泰实业有限公司	IRFC140	IR	23+	裸片	10000	原装正品现货	询价
贸泽芯城（深圳）电子科技有限公司	IRFC140NB	INFINEON/英飞凌	23+		15510	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市永贝尔科技有限公司	IRFC150	IXYS	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
深圳兆威电子有限公司	IRFC20	VB	2019	TO-252251	55000	绝对原装正品假一罚十!	询价

更多IRFC110R供应商更新时间2024-9-24 14:00:00

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