| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRFBF30 | Power MOSFET DESCRIPTION Third generation MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universially preferred for all commercial-industrial applications at power dissipation le 文件：1.0102 Mbytes 页数：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFBF30 | Power MOSFET DESCRIPTION Third generation MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universially preferred for all commercial-industrial applications at power dissipation le 文件：1.03881 Mbytes 页数：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFBF30 | Power MOSFET(Vdss=900V, Rds(on)=3.7ohm, Id=3.6A) Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • 文件：166.46 Kbytes 页数：6 Pages | IRF | IRF | |
IRFBF30 | Power MOSFET 文件：260.74 Kbytes 页数：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFBF30 | iscN-Channel MOSFET Transistor 文件：329.11 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | |
IRFBF30 | Power MOSFET 文件：1.02821 Mbytes 页数：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
Power MOSFET DESCRIPTION Third generation MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universially preferred for all commercial-industrial applications at power dissipation le 文件：1.03881 Mbytes 页数：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION Third generation MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universially preferred for all commercial-industrial applications at power dissipation le 文件：1.0102 Mbytes 页数：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
HEXFET Power MOSFET Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • 文件：245.38 Kbytes 页数：8 Pages | IRF | IRF | ||
Power MOSFET DESCRIPTION Third generation MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) package is universially preferred for all commercial-industrial applications at power dissipat 文件：267.41 Kbytes 页数：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
详细参数
- 型号：
IRFBF30
- 功能描述：
MOSFET N-Chan 900V 3.6 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2025+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
IR |
05+ |
TO-220 |
7000 |
自己公司全新库存绝对有货 |
询价 | ||
IR |
15+ |
TO-220 |
11560 |
全新原装,现货库存,长期供应 |
询价 | ||
IR |
24+/25+ |
48 |
原装正品现货库存价优 |
询价 | |||
IR |
24+ |
TO220 |
500 |
询价 | |||
ir |
26+ |
原装 |
6980 |
原装现货,可开13%税票 |
询价 | ||
IR |
24+ |
原厂封装 |
5000 |
原装现货假一罚十 |
询价 | ||
IR |
24+ |
TO220 |
5000 |
只做原装公司现货 |
询价 | ||
IR |
23+ |
TO220-3 |
8650 |
受权代理!全新原装现货特价热卖! |
询价 | ||
INTERNATIONA |
25+ |
原厂封装 |
9888 |
专做原装正品,假一罚百! |
询价 |
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