Power MOSFET(Vdss=150V, Rds(on)max=0.032ohm, Id=50A)

SMPS MOSFET Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters • Motor Con

文件：211.47 Kbytes 页数：8 Pages

IRF

N-Channel MOSFET Transistor

• DESCRITION • High frequency DC-DC converters • Uninterruptible Power Supplies • FEATURES • Static drain-source on-resistance: RDS(on) ≤32mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable

文件：338.66 Kbytes 页数：2 Pages

ISC

无锡固电

HEXFET Power MOSFET

SMPS MOSFET Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters • Motor

文件：166.87 Kbytes 页数：8 Pages

IRF

High frequency DC-DC converters

文件：175.83 Kbytes 页数：9 Pages

IRF

High frequency DC-DC converters

文件：175.83 Kbytes 页数：9 Pages

IRF

采用 TO-220AB 封装的 150V 单 N 通道 HEXFET 功率 MOSFET

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 经过充分验证的雪崩电压和电流\n• 低栅漏电荷，可降低开关损耗\n• 经过充分验证的的电容，包括有效的Coss以简化设计;

Infineon

英飞凌