Power MOSFET(Vdss=150V, Rds(on)max=0.032ohm, Id=50A)

Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters

文件：134.84 Kbytes 页数：11 Pages

IRF

N-Channel MOSFET Transistor

文件：338.75 Kbytes 页数：2 Pages

ISC

无锡固电

HEXFET Power MOSFET

Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current ● Lead-Free Applications ● High frequency DC-DC converters ● Plasma Displa

文件：345.45 Kbytes 页数：12 Pages

IRF

采用 TO-220 封装的 150V 单 N 沟道功率 MOSFET

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 经过充分验证的雪崩电压和电流\n• 低栅漏电荷，可降低开关损耗\n• 经过充分验证的的电容，包括有效的Coss以简化设计;

Infineon

英飞凌