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IRFB52N15

Power MOSFET(Vdss=150V, Rds(on)max=0.032ohm, Id=50A)

Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent Applications •HighfrequencyDC-DCconverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFB52N15D

Power MOSFET(Vdss=150V, Rds(on)max=0.032ohm, Id=50A)

Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent Applications •HighfrequencyDC-DCconverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFB52N15DPBF

HEXFET Power MOSFET

Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent ●Lead-Free Applications ●HighfrequencyDC-DCconverters ●PlasmaDispla

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFB52N15D

N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

52N15D

PowerMOSFET(Vdss=150V,Rds(on)max=0.032ohm,Id=50A)

Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent Applications •HighfrequencyDC-DCconverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IIRFB52N15D

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IIRFS52N15D

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFS52N15D

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFS52N15D

PowerMOSFET(Vdss=150V,Rds(on)max=0.032ohm,Id=50A)

Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent Applications •HighfrequencyDC-DCconverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFS52N15DPBF

HEXFETPowerMOSFET

Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent ●Lead-Free Applications ●HighfrequencyDC-DCconverters ●PlasmaDispla

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFS52N15DPBF

HighfrequencyDC-DCconverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFSL52N15D

PowerMOSFET(Vdss=150V,Rds(on)max=0.032ohm,Id=50A)

Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent Applications •HighfrequencyDC-DCconverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFSL52N15D

iscN-ChannelMOSFETTransistor

•DESCRITION •HighfrequencyDC-DCconverters •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤32mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFSL52N15DPBF

HEXFETPowerMOSFET

Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent ●Lead-Free Applications ●HighfrequencyDC-DCconverters ●PlasmaDispla

IRFInternational Rectifier

英飞凌英飞凌科技公司

详细参数

  • 型号:

    IRFB52N15

  • 制造商:

    IRF

  • 制造商全称:

    International Rectifier

  • 功能描述:

    Power MOSFET(Vdss=150V, Rds(on)max=0.032ohm, Id=50A)

供应商型号品牌批号封装库存备注价格
IR
15+
TO-220
11560
全新原装,现货库存,长期供应
询价
IR
23+
TO-220
35890
询价
IR
23+
TO-220
3000
全新原装
询价
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IR
22+
TO-220
6000
终端可免费供样,支持BOM配单
询价
IR
23+
TO-220
8000
只做原装现货
询价
IR
2017+
TO-220AB
42558
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增
询价
IR
06+
原产原装
1000
自己公司全新库存绝对有货
询价
IR
50
原装正品现货供应
询价
IR
2015+
TO-220
19889
一级代理原装现货,特价热卖!
询价
更多IRFB52N15供应商 更新时间2024-4-29 17:46:00