HEXFET Power MOSFET

Benefits • Worldwide Best RDS(on) in TO-220 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche SOA • Enhanced body diode dV/dt and dI/dt Capability Applications • High Efficiency Synchronous Rectification in SMPS • Uninterruptible Power S

文件：383.68 Kbytes 页数：11 Pages

IRF

isc N-Channel MOSFET Transistor

文件：330.58 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：IRFB4310Z；Package：TO-220；100 V N-Channel MOSFET

Benefits * Improved Gate, Avalanche and Dynamic dV/dt Ruggedness * Fully Characterized Capacitance and Avalanche SOA * Enhanced body diode dV/dt and dI/dt Capability *Lead-Free *Halogen-Free *VDS =100V *ID=120A *RDS(ON) (at VGS=10V)

文件：838.67 Kbytes 页数：9 Pages

UMW

友台半导体

采用 TO-220 封装的 100V 单 N 沟道功率 MOSFET

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 快速开关\n• 175°C 的工作温度;

Infineon

英飞凌

100V N-Channel Power MOSFET

MINOS

迈诺斯

HEXFET짰Power MOSFET

Benefits • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche SOA • Enhanced body diode dV/dt and dI/dt Capability • Lead-Free Applications • High Efficiency Synchronous Rectification in SMPS • Uninterruptible Power Supply • High Speed Pow

文件：381.53 Kbytes 页数：12 Pages

IRF

HEXFET Power MOSFET

Benefits • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche SOA • Enhanced body diode dV/dt and dI/dt Capability • Lead-Free Applications • High Efficiency Synchronous Rectification in SMPS • Uninterruptible Power Supply • High Speed Po

文件：426.56 Kbytes 页数：11 Pages

IRF

HEXFETPower MOSFET

文件：291.29 Kbytes 页数：8 Pages

IRF

High Efficiency Synchronous Rectification in SMPS

文件：382.49 Kbytes 页数：12 Pages

IRF

High Efficiency Synchronous Rectification in SMPS

文件：382.49 Kbytes 页数：12 Pages

IRF