IRFB3806

60V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装; \n优势:\n• Optimized for broadest availability from distribution partners\n• Product qualification according to JEDEC standard\n• Optimized for 10V gate-drive voltage (called Normal level)\n• Industry standard through-hole power package\n• High-current carrying capability package (upto 195A, die-size dependent)\n• Capable of being wave soldered\n;

IRFB3806

N-Channel MOSFET Transistor

IRFB3806PBF

HEXFET

Power MOSFET

Benefits ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●EnhancedbodydiodedV/dtanddI/dtCapability Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPowerSwitching

IRFB3806PBF

High Efficiency Synchronous Rectification in SMPS

IRFR3806

N-ChannelMOSFETTransistor

IRFR3806

AdvancedProcessTechnology

IRFR3806

N-ChannelMOSFET

Features *VDS(V)=60V *RDS(ON)15.8m(VGS=10V) Benefits *ImprovedGate,AvalancheandDynamic dv/dtRuggedness *FullyCharacterizedCapacitanceand AvalancheSOA *EnhancedbodydiodedV/dtanddI/dt Capability

IRFR3806

N-ChannelMOSFET

Features VDS(V)=60V RDS(ON)

IRFR3806PBF

HighEfficiencySynchronousRectificationinSMPS

IRFR3806PBF

HEXFETPowerMOSFET