IRFB3306G规格书行情报价英飞凌Infineon-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IRFB3306G	文件：300 bytes Page：1 Pages	60V 单个 N 通道 HEXFET Power MOSFET, 采用无铅无卤素 TO-220AB 封装 \n优势:\n• 符合 RoHS\n ;	Infineon 英飞凌	Infineon
IRFB3306GPBF	文件：298.19 Kbytes Page：8 Pages	HEXFET Power MOSFET 文件：298.19 Kbytes 页数：8 Pages	IRF	IRF
IRFB3306PBF	文件：433.13 Kbytes Page：11 Pages	High Efficiency Synchronous Rectification in SMPS Benefits ● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability ● Lead-Free ● RoHS Compliant, Halogen-Free Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptibl 文件：433.13 Kbytes 页数：11 Pages	IRF	IRF
IRFB3306PBF	文件：446.45 Kbytes Page：11 Pages	High Efficiency Synchronous Rectification in SMPS Benefits ● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability ● Lead-Free ● RoHS Compliant, Halogen-Free Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptibl 文件：446.45 Kbytes 页数：11 Pages	IRF	IRF
IRFI3306G	文件：260.24 Kbytes Page：2 Pages	Isc N-Channel MOSFET Transistor 文件：260.24 Kbytes 页数：2 Pages	ISC 无锡固电	ISC

更多IRFB3306G供应商更新时间2025-11-3 13:00:00